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- Title
Conformal growth and characterization of hafnium silicate thin film by MOCVD using HTB (hafnium tertra-tert-butoxide) and TDEAS (tetrakis-diethylamino silane).
- Authors
Jaehyun Kim; Kijung Yong
- Abstract
Abstract?? Hafnium silicate (HfSixOy) films were deposited by metal-organic chemical vapor deposition (MOCVD) using hafnium tetra-tert-butoxide [HTB, Hf(OC(CH3)3)4] and tetrakis-diethylamino silane [TDEAS, Si(N(C2H5)2)4]. The grown Hf-silicate films showed Hf-rich composition and impurity concentrations less than 1 atomic % (below detection limits). Uniformly deposited films with good step-coverage were obtained on hole-patterned SiO2substrates. Hafnium silicate films had stable amorphous crystalline structure up to 800??C annealing and above 900??C, a tetragonal HfO2crystal phase was observed. Dielectric constant (k) of the Hf-silicate films was about 15 and flat band voltage (Vfb) and hysteresis were very low.
- Subjects
HAFNIUM; SILICATES; THIN films; METAL organic chemical vapor deposition
- Publication
Journal of Materials Science: Materials in Electronics, 2007, Vol 18, Issue 4, p391
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-006-9050-2