We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
SIMS depth profiling analysis of P-doped n-type Si layer to develop the Si QD solar cell.
- Authors
Kim, Tae Woon; Baek, Hyun Jeong; Jang, Jong Shik; Lee, Seung Mi; Kim, Kyung Joong
- Abstract
Doping of phosphorus in silicon is important for the formation of n-type semiconducting material for the silicon-based electronic devices. In this study, the diffusion behavior of P in a SiO2/InP-doped Si multilayer film was investigated by SIMS depth profiling. It showed a clear preferential diffusion of P to the Si/SiO2 interface regions. This behavior will act as a negative factor for the active doping of P in silicon quantum dot (QD) solar cells. As a result, the conversion efficiency of a heterojunction Si QD solar cell with a P-doped Si QD layer was much lower than that with a B-doped Si QD layer. Copyright © 2014 John Wiley & Sons, Ltd.
- Subjects
DOPING agents (Chemistry); SILICON; SEMICONDUCTORS; QUANTUM dots; SOLAR cells
- Publication
Surface & Interface Analysis: SIA, 2014, Vol 46, p341
- ISSN
0142-2421
- Publication type
Article
- DOI
10.1002/sia.5407