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- Title
Influence of the Irradiation with High-Energy Xe Ions on the Structure and Photoluminescence of Silicon and Silica with InAs Nanoclusters.
- Authors
Komarov, F. F.; Milchanin, O. V.; Parkhomenko, I. N.; Vlasukova, L. A.; Nechaev, N. S.; Skuratov, V. A.; Yuvchenko, V. N.
- Abstract
The authors have given results of investigations into the structural and optical properties of InAs nanoclusters formed by the ion-implantation method in silicon and silica matrices. The influence of the heat treatment at a temperature of 900°C and of the irradiation with Xe ions with an energy of 167 MeV and a fluence of 3·1014 cm–2 on the structure and photoluminescence of the formed systems has been found. In the case of the system ″InAs in SiO2″ the irradiation with Xe ions leads to an enhancement of the intensity and a broadening of the luminescence spectrum in the visible spectral region (550–750 nm). The ordering of the nanoclusters and their stretching along the path of the Xe ions in the SiO2 matrix has been found.
- Subjects
IONIC structure; PHOTOLUMINESCENCE; VISIBLE spectra; ION energy; SILICA
- Publication
Journal of Engineering Physics & Thermophysics, 2019, Vol 92, Issue 2, p508
- ISSN
1062-0125
- Publication type
Article
- DOI
10.1007/s10891-019-01958-y