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- Title
A 13 bit 10 MHz bandwidth MASH 3-2 Σ∆ modulator in 90 nm CMOS.
- Authors
Sohrabi, Zahra; Yavari, Mohammad
- Abstract
ABSTRACT In this paper, a new multi loop sigma-delta (ΣΔ) modulator is proposed which employs one order redundant noise shaping in the first stage so the effect of the quantization noise leakage is minimized. Thus, analog circuit requirements are considerably relaxed compared to the conventional Multi-stAge-noise-SHaping (MASH) structures. This enhancement makes the structure appropriate for low voltage and broadband applications. The proposed architecture is compared with traditional high-order structures, and the advantages are demonstrated by both the analysis and behavioral system level simulations. As a prototype, the proposed MASH 3-2 sigma-delta modulator is designed, and the detailed design procedure is presented from the system level to the circuit level in a 90 nm CMOS technology. Circuit level simulation results show that the modulator achieves a peak signal-to-noise and distortion ratio of 79.4 dB and 79 dB dynamic range over a 10 MHz bandwidth with a sampling frequency of 160 MHz. It consumes 35.4 mW power from a single 1 V supply. Copyright © 2012 John Wiley & Sons, Ltd.
- Subjects
BANDWIDTHS; COMPLEMENTARY metal oxide semiconductors; BROADBAND communication systems; COMPUTER architecture; MASH (Computer system)
- Publication
International Journal of Circuit Theory & Applications, 2013, Vol 41, Issue 11, p1136
- ISSN
0098-9886
- Publication type
Article
- DOI
10.1002/cta.1816