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Reduction of parasitic reaction in high-temperature AlN growth by jet stream gas flow metal–organic vapor phase epitaxy.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-10937-y
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- Article
Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-04876-x
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- Article
Leakages suppression by isolating the desired quantum levels for high-temperature terahertz quantum cascade lasers.
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- Scientific Reports, 2021, v. 11, n. 1, p. 1, doi. 10.1038/s41598-021-02301-3
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- Article
Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-30489-z
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- Article
High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy.
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- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-29150-6
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- Article
Optical gain reduction caused by nonrelevant subbands in narrow-period terahertz quantum cascade laser designs.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-25139-9
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- Article
Nonrelevant quantum levels effecting on the current in 2-well terahertz quantum cascade lasers.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-22396-6
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- Article
Performance Improvement of AlN Crystal Quality Grown on Patterned Si(111) Substrate for Deep UV-LED Applications.
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- Scientific Reports, 2016, p. 35681, doi. 10.1038/srep35681
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- Article
Direct Growth and Controlled Coalescence of Thick AlN Template on Micro-circle Patterned Si Substrate.
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- Scientific Reports, 2015, p. 1, doi. 10.1038/srep14734
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- Article
Short-period scattering-assisted terahertz quantum cascade lasers operating at high temperatures.
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- Scientific Reports, 2019, v. 9, n. 1, p. N.PAG, doi. 10.1038/s41598-019-45957-8
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- Article
High-efficiency UV LEDs using quaternary InAlGaN.
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- Electrical Engineering in Japan, 2006, v. 157, n. 3, p. 43, doi. 10.1002/eej.20287
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- Article
Over One Watt Output Power Terahertz Quantum Cascade Lasers by Using High Doping Concentration and Variable Barrier‐Well Height.
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- Physica Status Solidi - Rapid Research Letters, 2022, v. 16, n. 7, p. 1, doi. 10.1002/pssr.202200033
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- Article
Smart Wide‐Bandgap Omnidirectional Reflector as an Effective Hole‐Injection Electrode for Deep‐UV Light‐Emitting Diodes.
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- Advanced Optical Materials, 2020, v. 8, n. 2, p. N.PAG, doi. 10.1002/adom.201901430
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- Article
Enhanced Strain Relaxation in AlGaN Layers Grown on Sputter‐Based AlN Templates.
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- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900590
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- Article
Influence of the Strain Relaxation on the Optical Property of AlGaN Quantum Wells.
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- Physica Status Solidi (B), 2020, v. 257, n. 4, p. 1, doi. 10.1002/pssb.201900582
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- Article
Effects of Ga Supply on the Growth of (11‐22) AlN on <italic>m</italic>‐Plane (10‐10) Sapphire Substrates.
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- Physica Status Solidi (B), 2018, v. 255, n. 5, p. 1, doi. 10.1002/pssb.201700418
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- Article
Progress and Outlook of 10% Efficient AlGaN‐Based (290–310 nm) Band UVB LEDs.
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- Physica Status Solidi. A: Applications & Materials Science, 2024, v. 221, n. 13, p. 1, doi. 10.1002/pssa.202470025
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- Article
Milliwatt‐Power AlGaN Deep‐UV Light‐Emitting Diodes at 254 nm Emission as a Clean Alternative to Mercury Deep‐UV Lamps.
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- Physica Status Solidi. A: Applications & Materials Science, 2023, v. 220, n. 1, p. 1, doi. 10.1002/pssa.202200621
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- Article
Highly Transparent p‐AlGaN‐Based (326–341 nm)‐Band Ultraviolet‐A Light‐Emitting Diodes on AlN Templates: Recent Advances and Perspectives.
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- Physica Status Solidi. A: Applications & Materials Science, 2022, v. 219, n. 7, p. 1, doi. 10.1002/pssa.202100605
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- Article
Influence of Undoped‐AlGaN Final Barrier of MQWs on the Performance of Lateral‐Type UVB LEDs.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 18, p. N.PAG, doi. 10.1002/pssa.201900185
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- Article
Influence of Undoped‐AlGaN Final Barrier of MQWs on the Performance of Lateral‐Type UVB LEDs.
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- Physica Status Solidi. A: Applications & Materials Science, 2019, v. 216, n. 18, p. N.PAG, doi. 10.1002/pssa.201900185
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- Article
Improving the Light‐Extraction Efficiency of AlGaN DUV‐LEDs by Using a Superlattice Hole Spreading Layer and an Al Reflector.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700436
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- Article
Improving the Efficiency of AlGaN Deep‐UV LEDs by Using Highly Reflective Ni/Al p‐Type Electrodes.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700435
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- Article
Variable Barrier Height AlGaAs/GaAs Quantum Cascade Laser Operating at 3.7 THz.
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- Physica Status Solidi. A: Applications & Materials Science, 2018, v. 215, n. 8, p. 1, doi. 10.1002/pssa.201700424
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- Article
Recent Progress in AlGaN-Based Deep-UV LEDs.
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- Electronics & Communications in Japan, 2015, v. 98, n. 5, p. 1, doi. 10.1002/ecj.11667
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Development of 230–270 nm AlGaN-based deep-UV LEDs.
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- Electronics & Communications in Japan, 2010, v. 93, n. 3, p. 24, doi. 10.1002/ecj.10197
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- Article
Inhibitory effect of oral intake of natural Phellinus linteus fruit body on growth and pulmonary metastasis of B16/BL6 melanoma.
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- Journal of Natural Medicines, 2007, v. 61, n. 4, p. 438, doi. 10.1007/s11418-007-0163-6
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- Article
The Influence of Alloy Disorder Effects on the Anisotropy of Emission Diagrams in (Al,Ga)N Quantum Wells Embedded into AlN Barriers.
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- Physica Status Solidi (B), 2024, v. 261, n. 8, p. 1, doi. 10.1002/pssb.202400215
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- Article
Molecular beam epitaxy growth of GaN/AlGaN quantum cascade structure using droplet elimination by thermal annealing technique.
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- Physica Status Solidi. A: Applications & Materials Science, 2011, v. 208, n. 5, p. 1187, doi. 10.1002/pssa.201000871
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- Article
M-plane GaN terahertz quantum cascade laser structure design and doping effect for resonant-phonon and phonon-scattering-injection schemes.
- Published in:
- Scientific Reports, 2023, v. 13, n. 1, p. 1, doi. 10.1038/s41598-023-38627-3
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- Article