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- Title
AlSb THIN FILMS PREPARED BY DC MAGNETRON SPUTTERING AND ANNEALING.
- Authors
CHEN, WEIDONG; FENG, LIANGHUAN; LEI, ZHI; ZHANG, JINGQUAN; YAO, FEFE; CAI, WEI; CAI, YAPING; LI, WEI; WU, LILI; LI, BING; ZHENG, JIA-GUI
- Abstract
Aluminum antimonide (AlSb) is thought to be a potential material for high efficiency solar cells. In this paper, AlSb thin films have been fabricated by DC magnetron sputtering on glass substrates. The sputtering target consists of aluminum and antimony, and the area ratio of Al to Sb is 7:3, which is derived from research into the relationship between the deposition rates of both the metals and sputtering power. XRD and AFM measurements show that the as-deposited films are amorphous, but become polycrystalline with an average grain size of about 20 nm after annealing in an argon atmosphere. From optical absorption measurements of annealed AlSb films, a band gap of 1.56 eV has been demonstrated. Hall measurements show that the films are p-type semiconductors. The temperature dependence of dark conductivity tested in vacuum displays a linear lnσ to 1/T curve, which indicates a conductivity activation energy of around 0.61 eV.
- Subjects
SEMICONDUCTORS; ALUMINUM; SOLAR cells; MAGNETRONS; ANTIMONY; METALS; POLYCRYSTALLINE semiconductors
- Publication
International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2008, Vol 22, Issue 14, p2275
- ISSN
0217-9792
- Publication type
Article
- DOI
10.1142/S0217979208039447