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- Title
Frequency noise analysis of 1.55 µm indium arsenide/indium phosphide quantum dot lasers: impact of non-linear gain and direct carrier transition.
- Authors
Sanaee, Maryam; Zarifkar, Abbas; Sheikhi, Mohammad Hossein
- Abstract
Frequency noise (FN) characteristic of 1.55 µm quantum dot (QD) lasers is investigated by introducing a theoretical model. A set of five rate equations are developed in presence of Langevin noise sources by writing a new equation for dynamics of the optical field phase. To investigate the effects of non-linear gain and direct carrier transition on FN spectrum of QD lasers, the auto and cross-correlation coefficients between carriers and photons have been calculated. Calculations demonstrate that the excited state and ground state (GS) carriers' shot noises play dominant role on both the level and the resonance frequency of FN spectrum. Moreover, the level of FN declines by increasing the non-linear gain coefficient. On the other hand, direct carrier transition from wetting layer to the lasing state of GS leads to lower-frequency fluctuations. Finally, it is revealed that the linewidth of QD laser decreases by increasing the pumping current and its value is in the order of about 1 MHz.
- Subjects
LASERS; PERFORMANCE of quantum dot lasers; INDIUM arsenide phosphide; LANGEVIN equations; RESONANCE frequency analysis; GROUND state (Quantum mechanics); LASERS in physics; NOISE
- Publication
IET Optoelectronics (Wiley-Blackwell), 2016, Vol 10, Issue 4, p134
- ISSN
1751-8768
- Publication type
Article
- DOI
10.1049/iet-opt.2015.0027