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- Title
Synthesis of one-dimensional N-doped GaO nanostructures: different morphologies and different mechanisms.
- Authors
Vanithakumari, S.; Nanda, K.
- Abstract
N-doped monoclinic GaO nanostructures of different morphologies have been synthesized by heating Ga metal in ambient air at 1150°C to 1350°C for 1 to 5 h duration. Neither catalyst nor any gas flow has been used for the synthesis of N-doped GaO nanostructures. The morphology was controlled by monitoring the curvature of the Ga droplet. Plausible growth mechanisms are discussed to explain the different morphology of the nanostructures. Elemental mapping by electron energy loss spectroscopy of the nanostructures indicate uniform distribution of Ga, O and N. It is interesting to note that we have used neither nitride source nor any gas flow but the synthesis was carried out in ambient air. We believe that ambient nitrogen acts as the source of nitrogen. Unintentional nitrogen doping of the GaO nanostructures is a straightforward method and such nanostructures could be promising candidates for white light emission.
- Subjects
GALLIUM compounds synthesis; NANOSTRUCTURES; SEMICONDUCTOR doping; CHEMICAL synthesis; ELECTRON energy loss spectroscopy; METAL catalysts
- Publication
Bulletin of Materials Science, 2011, Vol 34, Issue 7, p1331
- ISSN
0250-4707
- Publication type
Article
- DOI
10.1007/s12034-011-0324-9