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High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition.
Published in:
Crystallography Reports, 2020, v. 65, n. 1, p. 122, doi. 10.1134/S1063774520010071
By:
- Ezubchenko, I. S.;
- Chernykh, M. Ya.;
- Mayboroda, I. O.;
- Trun'kin, I. N.;
- Chernykh, I. A.;
- Zanaveskin, M. L.
Publication type:
Article
Electron microscopy study of the microstructure of Ni-W substrate surface.
Published in:
Crystallography Reports, 2016, v. 61, n. 6, p. 1002, doi. 10.1134/S1063774516060109
By:
- Ovcharov, A.;
- Karateev, I.;
- Mikhutkin, A.;
- Orekhov, A.;
- Presniakov, M.;
- Chernykh, I.;
- Zanaveskin, M.;
- Kovalchuk, M.;
- Vasiliev, A.
Publication type:
Article
Formation of ultrasmooth thin silver films by pulsed laser deposition.
Published in:
Crystallography Reports, 2013, v. 58, n. 5, p. 739, doi. 10.1134/S1063774513030097
By:
- Kuznetsov, I.;
- Garaeva, M.;
- Mamichev, D.;
- Grishchenko, Yu.;
- Zanaveskin, M.
Publication type:
Article
Investigation into the correlation factor of substrate and multilayer film surfaces by atomic force microscopy.
Published in:
Crystallography Reports, 2013, v. 58, n. 3, p. 493, doi. 10.1134/S1063774513030061
By:
- Grishchenko, J.;
- Zanaveskin, M.
Publication type:
Article
Characterization of single-crystal sapphire substrates by X-ray methods and atomic force microscopy.
Published in:
Crystallography Reports, 2011, v. 56, n. 3, p. 456, doi. 10.1134/S1063774511030242
By:
- Prokhorov, I.;
- Zakharov, B.;
- Asadchikov, V.;
- Butashin, A.;
- Roshchin, B.;
- Tolstikhina, A.;
- Zanaveskin, M.;
- Grishchenko, Yu.;
- Muslimov, A.;
- Yakimchuk, I.;
- Volkov, Yu.;
- Kanevskii, V.;
- Tikhonov, E.
Publication type:
Article
Influence of surface topography on the multilayer film formation.
Published in:
Crystallography Reports, 2010, v. 55, n. 1, p. 136, doi. 10.1134/S1063774510010207
By:
- Grishchenko, Yu. V.;
- Zanaveskin, M. L.;
- Tolstikhina, A. L.
Publication type:
Article
Correlation between the substrate roughness and light loss for interference mirror coatings.
Published in:
Crystallography Reports, 2008, v. 53, n. 4, p. 701, doi. 10.1134/S106377450804024X
By:
- Zanaveskin, M. L.;
- Roshchin, B. S.;
- Grishchenko, Yu. V.;
- Azarova, V. V.;
- Asadchikov, V. E.;
- Tolstikhina, A. L.
Publication type:
Article
Particular artifacts of topographic images of dielectrics in atomic-force microscopy.
Published in:
Crystallography Reports, 2007, v. 52, n. 5, p. 894, doi. 10.1134/S1063774507050203
By:
- Tolstikhina, A. L.;
- Gaĭnutdinov, R. V.;
- Zanaveskin, M. L.;
- Sorokina, K. L.;
- Belugina, N. V.;
- Grishchenko, Yu. V.
Publication type:
Article
Formation of a Memristive Array of Crossbar-Structures Based on (Co40Fe40B20)x(LiNbO3)100 Nanocomposite.
Published in:
Journal of Communications Technology & Electronics, 2019, v. 64, n. 10, p. 1135, doi. 10.1134/S1064226919100103
By:
- Nikiruy, K. E.;
- Emelyanov, A. V.;
- Rylkov, V. V.;
- Sitnikov, A. V.;
- Presnyakov, M. Yu.;
- Kukueva, E. V.;
- Grishchenko, Yu. V.;
- Minnekhanov, A. A.;
- Chernoglazov, K. Yu.;
- Nikolaev, S. N.;
- Chernykh, I. A.;
- Zanaveskin, M. L.;
- Demin, V. A.
Publication type:
Article
Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures.
Published in:
Semiconductors, 2020, v. 54, n. 9, p. 1150, doi. 10.1134/S1063782620090067
By:
- Chumakov, N. K.;
- Chernykh, I. A.;
- Davydov, A. B.;
- Ezubchenko, I. S.;
- Grishchenko, Yu. V.;
- Lev, L. L.;
- Maiboroda, I. O.;
- Morgun, L. A.;
- Strocov, V. N.;
- Valeyev, V. G.;
- Zanaveskin, M. L.
Publication type:
Article
Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal.
Published in:
Semiconductors, 2018, v. 52, n. 6, p. 776, doi. 10.1134/S1063782618060131
By:
- Maiboroda, I. O.;
- Grishchenko, J. V.;
- Ezubchenko, I. S.;
- Sokolov, I. S.;
- Chernych, I. A.;
- Andreev, A. A.;
- Zanaveskin, M. L.
Publication type:
Article
Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure.
Published in:
Technical Physics, 2017, v. 62, n. 8, p. 1288, doi. 10.1134/S1063784217080035
By:
- Andreev, A.;
- Vavilova, E.;
- Ezubchenko, I.;
- Zanaveskin, M.;
- Maiboroda, I.
Publication type:
Article
Nondestructive methods of controlling the surface nanorelief by the example of sapphire substrates.
Published in:
Inorganic Materials, 2009, v. 45, n. 14, p. 1635, doi. 10.1134/S0020168509140246
By:
- Asadchikov, V. E.;
- Butashin, A. V.;
- Volkov, Yu. O.;
- Grischenko, Yu. V.;
- Deryabin, A. N.;
- Zanaveskin, M. L.;
- Kanevskii, V. M.;
- Kozhevnikov, I. V.;
- Roschin, B. S.;
- Tikhonov, E. O.;
- Tolstikhina, A. L.;
- Fedorov, V. A.
Publication type:
Article
GaN-on-Silicon Growth Features: Controlled Plastic Deformation.
Published in:
Technical Physics Letters, 2021, v. 47, n. 10, p. 705, doi. 10.1134/S1063785021070208
By:
- Ezubchenko, I. S.;
- Chernykh, M. Ya.;
- Perminov, P. A.;
- Grishchenko, J. V.;
- Trun'kin, I. N.;
- Chernykh, I. A.;
- Zanaveskin, M. L.
Publication type:
Article
Substrates with Diamond Heat Sink for Epitaxial GaN Growth.
Published in:
Technical Physics Letters, 2021, v. 47, n. 5, p. 353, doi. 10.1134/S1063785021040118
By:
- Maiboroda, I. O.;
- Chernykh, I. A.;
- Sedov, V. S.;
- Altakhov, A. S.;
- Andreev, A. A.;
- Grishchenko, Yu. V.;
- Kolobkova, E. M.;
- Mart'yanov, A. K.;
- Konov, V. I.;
- Zanaveskin, M. L.
Publication type:
Article
Power Characteristics of GaN Microwave Transistors on Silicon Substrates.
Published in:
Technical Physics Letters, 2020, v. 46, n. 3, p. 211, doi. 10.1134/S1063785020030050
By:
- Chernykh, I. A.;
- Romanovskiy, S. M.;
- Andreev, A. A.;
- Ezubchenko, I. S.;
- Chernykh, M. Y.;
- Grishchenko, J. V.;
- Mayboroda, I. O.;
- Korneev, S. V.;
- Krymko, M. M.;
- Zanaveskin, M. L.;
- Sinkevich, V. F.
Publication type:
Article
Ohmic Contacts to Europium Oxide for Spintronic Devices.
Published in:
Technical Physics Letters, 2019, v. 45, n. 4, p. 345, doi. 10.1134/S1063785019040047
By:
- Andreev, A. A.;
- Grishchenko, Yu. V.;
- Chernykh, I. A.;
- Zanaveskin, M. L.;
- Lobanovich, E. F.
Publication type:
Article
A Superconducting Joint for 2G HTS Tapes.
Published in:
Technical Physics Letters, 2019, v. 45, n. 4, p. 324, doi. 10.1134/S1063785019040072
By:
- Kulikov, I. V.;
- Chernykh, M. Y.;
- Krylova, T. S.;
- Ovcharov, A. V.;
- Chernykh, I. A.;
- Zanaveskin, M. L.
Publication type:
Article
Studying the Characteristics of Transistors Based on Gallium Nitride Heterostructures Grown by Ammonia Molecular Beam Epitaxy on Sapphire and Silicon Substrates.
Published in:
Technical Physics Letters, 2019, v. 45, n. 2, p. 173, doi. 10.1134/S1063785019020238
By:
- Andreev, A. A.;
- Grishchenko, Yu. V.;
- Ezubchenko, I. S.;
- Chernykh, M. Ya.;
- Kolobkova, E. M.;
- Maiboroda, I. O.;
- Chernykh, I. A.;
- Zanaveskin, M. L.
Publication type:
Article
Developing an approach based on the formation of YBaCuO-interlayer-YBaCuO epitaxial structures with high current-carrying ability.
Published in:
Technical Physics Letters, 2014, v. 40, n. 10, p. 905, doi. 10.1134/S1063785014100204
By:
- Garaeva, M.;
- Chernykh, I.;
- Krylova, T.;
- Shainurov, R.;
- Krasnoperov, E.;
- Zanaveskin, M.
Publication type:
Article
Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions.
Published in:
Technical Physics Letters, 2014, v. 40, n. 6, p. 488, doi. 10.1134/S1063785014060091
By:
- Maiboroda, I.;
- Andreev, A.;
- Perminov, P.;
- Fedorov, Yu.;
- Zanaveskin, M.
Publication type:
Article
The effect of the memristor electrode material on its resistance to degradation under conditions of cyclic switching.
Published in:
Technical Physics Letters, 2014, v. 40, n. 4, p. 317, doi. 10.1134/S1063785014040051
By:
- Khrapovitskaya, Yu.;
- Maslova, N.;
- Grishchenko, Yu.;
- Demin, V.;
- Zanaveskin, M.
Publication type:
Article
A study of the effect of the oxygen index of the target on the critical characteristics of YBaCuO epitaxial layers formed by pulsed laser deposition.
Published in:
Technical Physics Letters, 2014, v. 40, n. 1, p. 29, doi. 10.1134/S1063785014010027
By:
- Chernykh, I.;
- Stroev, A.;
- Garaeva, M.;
- Krylova, T.;
- Gur'ev, V.;
- Shavkin, S.;
- Zanaveskin, M.;
- Shikov, A.
Publication type:
Article
Seed layers on RABiTS tapes for Second-Generation HTS wires.
Published in:
Technical Physics Letters, 2012, v. 38, n. 9, p. 849, doi. 10.1134/S1063785012090209
By:
- Chernykh, I.;
- Stroev, A.;
- Klevalina, L.;
- Presnyakov, M.;
- Golovkova, E.;
- Tikhomirov, S.;
- Zanaveskin, M.;
- Marchenkov, A.;
- Shikov, A.
Publication type:
Article
Calculating correlation factor for substrate and film coating profiles according to data of atomic force microscopy.
Published in:
Technical Physics Letters, 2012, v. 38, n. 9, p. 777, doi. 10.1134/S1063785012090064
By:
- Grishchenko, Yu.;
- Zanaveskin, M.;
- Marchenkov, A.
Publication type:
Article
Technical Storage Ring Complex "Zelenograd" As a Base for an Engineering Center of Advanced Materials, Microelectronics, and Biomedical Technologies.
Published in:
Crystallography Reports, 2022, v. 67, n. 5, p. 712, doi. 10.1134/S1063774522050145
By:
- Kovalchuk, M. V.;
- Naraikin, O. S.;
- Zanaveskin, M. L.
Publication type:
Article
Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow.
Published in:
Crystallography Reports, 2021, v. 66, n. 3, p. 520, doi. 10.1134/S1063774521030172
By:
- Mayboroda, I. O.;
- Kolobkova, E. M.;
- Grishchenko, Yu. V.;
- Chernykh, I. A.;
- Zanaveskin, M. L.;
- Chumakov, N. K.
Publication type:
Article
Influence of High-Temperature Annealing of the Textured Metal Ni-W Substrate on the Structural Properties of Seed Layer in HTS 2G tapes.
Published in:
Physics of Metals & Metallography, 2018, v. 119, n. 3, p. 267, doi. 10.1134/S0031918X1803002X
By:
- Chernykh, M. Y.;
- Krylova, T. S.;
- Kulikov, I. V.;
- Chernykh, I. A.;
- Zanaveskin, M. L.
Publication type:
Article
On the Growth of High-Temperature Epitaxial AlN (AlGaN) Layers on Sapphire Substrates by Ammonia Molecular Beam Epitaxy.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2017, v. 11, n. 6, p. 1135, doi. 10.1134/S1027451017060167
By:
- Mayboroda, I. O.;
- Ezubchenco, I. S.;
- Grishchenko, Yu. V.;
- Presniakov, M. Yu.;
- Zanaveskin, M. L.
Publication type:
Article
Effect of reactive ion etching on the surface of polymethylmethacrylate.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2015, v. 9, n. 3, p. 457, doi. 10.1134/S1027451015030088
By:
- Mironova, A.;
- Popov, A.;
- Zanaveskin, M.
Publication type:
Article
Optical properties of 1D metal nanogratings.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2011, v. 5, n. 5, p. 941, doi. 10.1134/S1027451011100065
By:
- Chernykh, I.;
- Mamichev, D.;
- Grishchenko, Yu.;
- Roddatis, V.;
- Zanaveskin, M.;
- Shcherbakov, M.;
- Fedyanin, A.;
- Novoselova, E.;
- Smirnov, I.;
- Marchenkov, A.
Publication type:
Article
Features of X-ray diffraction on sapphire single crystals with a nanostructured surface.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2009, v. 3, n. 3, p. 447, doi. 10.1134/S1027451009030185
By:
- Blagov, A.;
- Prosekov, P.;
- Grischenko, Ju.;
- Zanaveskin, M.;
- Roschin, B.;
- Butashin, A.;
- Feodorov, V.;
- Kanevskii, V.;
- Asadchikov, V.
Publication type:
Article
Features in atomic force microscopy studies of dielectric surfaces.
Published in:
Journal of Surface Investigation: X-Ray, Synchrotron & Neutron Techniques, 2008, v. 2, n. 5, p. 722, doi. 10.1134/S1027451008050108
By:
- Tolstikhina, A.;
- Gainutdinov, R.;
- Zanaveskin, M.;
- Sorokina, K.;
- Belugina, N.;
- Grishchenko, Yu.
Publication type:
Article
Optical properties of one-dimensional subwave plasmonic nanostructures.
Published in:
JETP Letters, 2011, v. 92, n. 11, p. 742, doi. 10.1134/S0021364010230050
By:
- Andreev, A.;
- Grishchenko, Yu.;
- Dobynde, M.;
- Dolgova, T.;
- Zanaveskin, M.;
- Konovko, A.;
- Mamichev, D.;
- Marchenkov, A.;
- Novoselova, E.;
- Chernykh, I.;
- Smirnov, I.;
- Fedyanin, A.;
- Shcherbakov, M.
Publication type:
Article
k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures.
Published in:
Nature Communications, 2018, v. 9, p. 1, doi. 10.1038/s41467-018-04354-x
By:
- Lev, L. L.;
- Maiboroda, I. O.;
- Husanu, M. A.;
- Grichuk, E. S.;
- Chumakov, N. K.;
- Ezubchenko, I. S.;
- Chernykh, I. A.;
- Wang, X.;
- Tobler, B.;
- Schmitt, T.;
- Zanaveskin, M. L.;
- Valeyev, V. G.;
- Strocov, V. N.
Publication type:
Article

Found: 35

High-Quality AlN Layers Grown on Si(111) Substrates by Metalorganic Chemical Vapor Deposition.

Electron microscopy study of the microstructure of Ni-W substrate surface.

Formation of ultrasmooth thin silver films by pulsed laser deposition.

Investigation into the correlation factor of substrate and multilayer film surfaces by atomic force microscopy.

Characterization of single-crystal sapphire substrates by X-ray methods and atomic force microscopy.

Influence of surface topography on the multilayer film formation.

Correlation between the substrate roughness and light loss for interference mirror coatings.

Particular artifacts of topographic images of dielectrics in atomic-force microscopy.

Formation of a Memristive Array of Crossbar-Structures Based on (Co<sub>40</sub>Fe<sub>40</sub>B<sub>20</sub>)<sub>x</sub>(LiNbO<sub>3</sub>)<sub>100</sub> Nanocomposite.

Quantum Coherence and the Kondo Effect in the 2D Electron Gas of Magnetically Undoped AlGaN/GaN High-Electron-Mobility Transistor Heterostructures.

Tunneling Current in Oppositely Connected Schottky Diodes Formed by Contacts between Degenerate n-GaN and a Metal.

Influence of a low-temperature GaN cap layer on the electron concentration in AlGaN/GaN heterostructure.

Nondestructive methods of controlling the surface nanorelief by the example of sapphire substrates.

GaN-on-Silicon Growth Features: Controlled Plastic Deformation.

Substrates with Diamond Heat Sink for Epitaxial GaN Growth.

Power Characteristics of GaN Microwave Transistors on Silicon Substrates.

Ohmic Contacts to Europium Oxide for Spintronic Devices.

A Superconducting Joint for 2G HTS Tapes.

Studying the Characteristics of Transistors Based on Gallium Nitride Heterostructures Grown by Ammonia Molecular Beam Epitaxy on Sapphire and Silicon Substrates.

Developing an approach based on the formation of YBaCuO-interlayer-YBaCuO epitaxial structures with high current-carrying ability.

Selective MBE growth of nonalloyed ohmic contacts to 2D electron gas in high-electron-mobility transistors based on GaN/AlGaN heterojunctions.

The effect of the memristor electrode material on its resistance to degradation under conditions of cyclic switching.

A study of the effect of the oxygen index of the target on the critical characteristics of YBaCuO epitaxial layers formed by pulsed laser deposition.

Seed layers on RABiTS tapes for Second-Generation HTS wires.

Calculating correlation factor for substrate and film coating profiles according to data of atomic force microscopy.

Technical Storage Ring Complex "Zelenograd" As a Base for an Engineering Center of Advanced Materials, Microelectronics, and Biomedical Technologies.

Controlled Formation of β-Si3N4 on Native Oxidized Silicon Wafers in Ammonia Flow.

Influence of High-Temperature Annealing of the Textured Metal Ni-W Substrate on the Structural Properties of Seed Layer in HTS 2G tapes.

On the Growth of High-Temperature Epitaxial AlN (AlGaN) Layers on Sapphire Substrates by Ammonia Molecular Beam Epitaxy.

Effect of reactive ion etching on the surface of polymethylmethacrylate.

Optical properties of 1D metal nanogratings.

Features of X-ray diffraction on sapphire single crystals with a nanostructured surface.

Features in atomic force microscopy studies of dielectric surfaces.

Optical properties of one-dimensional subwave plasmonic nanostructures.

k-space imaging of anisotropic 2D electron gas in GaN/GaAlN high-electron-mobility transistor heterostructures.