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- Title
The Effect of Dose of Nitrogen-Ion Implantation on the Concentration of Point Defects Introduced into GaAs Layers.
- Authors
Sobolev, N. A.; Ber, B. Ya.; Kazantsev, D. Yu.; Kalyadin, A. E.; Karabeshkin, K. V.; Mikoushkin, V. M.; Sakharov, V. I.; Serenkov, I. T.; Shek, E. I.; Sherstnev, E. V.; Shmidt, N. M.
- Abstract
Secondary-ion mass spectrometry and Rutherford proton backscattering have been used to measure the concentration profiles of nitrogen atoms and examine the defect structure of epitaxial GaAs layers implanted with 250-keV N+ ions at doses of 5 × 1014-5 × 1016 cm-2. It was found that no amorphization of the layers being implanted occurs at doses exceeding the calculated amorphization threshold, a concentration of point defects that is formed is substantially lower than the calculated value, and a characteristic specific feature of the defect concentration profiles is the high defect concentration in the surface layer.
- Subjects
ION implantation; POSITRON annihilation; GALLIUM arsenide; X-ray diffraction; ELECTROCHEMICAL analysis
- Publication
Technical Physics Letters, 2018, Vol 44, Issue 7, p574
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785018070131