We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Approaching barrier-free contacts to monolayer MoS<sub>2</sub> employing [Co/Pt] multilayer electrodes.
- Authors
Gupta, S.; Rortais, F.; Ohshima, R.; Ando, Y.; Endo, T.; Miyata, Y.; Shiraishi, M.
- Abstract
The broken inversion symmetry and time-reversal symmetry along with the large spin–orbit interactions in monolayer MoS2 make it an ideal candidate for novel valleytronic applications. However, the realization of efficient spin-valley-controlled devices demands the integration of perpendicular magnetic anisotropy (PMA) electrodes with negligible Schottky barriers. Here, as the first demonstration, we fabricated a monolayer MoS2 field-effect transistor with PMA electrodes: Pt/[Co/Pt]3 and [Co/Pt]2. The I–V curves of PMA/MoS2 contacts show symmetric and linear behavior reflecting Ohmic nature. The flat-band Schottky barrier heights (SBHs) extracted using the temperature and gate voltage dependence of the I–V curves were found to be 10.2 and 9.6 meV. The observed SBHs are record low values reported thus far for any metal/monolayer MoS2 contact. High-quality PMA electrodes with almost zero SBH play a paramount role in the future development of novel spintronic/valleytronic devices; hence, our results can open a new route toward the realization of novel technological devices employing two-dimensional materials.The broken inversion symmetry and time-reversal symmetry along with the large spin–orbit interactions in monolayer MoS2 make it an ideal candidate for novel valleytronic applications. The present study demonstrates the fabrication of a monolayer MoS2 field-effect transistor employing [Co/Pt] multilayer electrodes. Integration of PMA electrodes results in very-low Schottky barrier height in MoS2-based field-effect transistor devices.
- Publication
NPG Asia Materials, 2021, Vol 13, Issue 1, p1
- ISSN
1884-4049
- Publication type
Article
- DOI
10.1038/s41427-021-00284-1