We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy.
- Authors
Baranov, A. I.; Uvarov, A. V.; Maksimova, A. A.; Vyacheslavova, E. A.; Kalyuzhnyy, N. A.; Mintairov, S. A.; Salii, R. A.; Yakovlev, G. E.; Zubkov, V. I.; Gudovskikh, A. S.
- Abstract
We consider structure with single quantum well InP 5 nm thick grown by vapor phase epitaxy on n-GaP wafer. By classical capacitance-voltage profiling of Schottky diode on sample and electrochemical profiling, electron accumulation were detected in InP layer so existence of quantum well is confirmed. Results of admittance spectroscopy and deep-level transient spectroscopy showed defect formation in GaP layers above InP with energy position of Ec-0.21, 0.30 and 0.93 eV.
- Subjects
EPITAXY; QUANTUM wells; SCHOTTKY barrier diodes; VAPORS
- Publication
Technical Physics Letters, 2023, Vol 49, pS163
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785023900649