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- Title
Growth of Silicene by Molecular Beam Epitaxy on CaF<sub>2</sub>/Si(111) Substrates Modified by Electron Irradiation.
- Authors
Zinovieva, A. F.; Zinovyev, V. A.; Katsyuba, A. V.; Volodin, V. A.; Muratov, V. I.; Dvurechenskii, A. V.
- Abstract
For the first time, the possibility of producing silicene on CaF2/Si(111) substrates modified by electron irradiation is experimentally demonstrated. It is shown that areas of the planar surface of CaSi2 with hexagonal packing formed under an electron beam can be used as a natural template for the subsequent growth of silicene. Silicon is deposited on such surfaces and the formation of silicene islands is confirmed by atomic force microscopy and Raman spectroscopy.
- Subjects
MOLECULAR beam epitaxy; SUBSTRATES (Materials science); ATOMIC force microscopy; ELECTRON beams; ELECTRONS; RAMAN spectroscopy
- Publication
JETP Letters, 2024, Vol 119, Issue 9, p703
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/S0021364024600599