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- Title
High level illumination effect on MS'S solar cell characteristics with a new material Ga2Se3, as an intermediate layer.
- Authors
Bhatnagar, M.; Bhatnagar, P. K.
- Abstract
Compound semiconductor heterostructure (Al–Ga2Se3–nSi) uses a new material for photovoltaic applications. This Metal-Semiconductor-Semiconductor (MS'S) structure with Ga2Se3 as an intermediate layer has been proposed as a better alternative to conventional Metal-Insulator-Semiconductor (MIS) solar cells for normal illumination. It is shown here that in the whole range – starting from lower intensity, i.e. at a concentration ratio, Cr∼1, to very high illumination level, Cr∼2000, the proposed new structure gives better results than corresponding MIS solar cells. © 1998 Chapman & Hall
- Subjects
COMPOUND semiconductors; METAL insulator semiconductors; LIGHTING research; SOLAR cells; HETEROSTRUCTURES; QUASIELASTIC light scattering
- Publication
Journal of Materials Science, 1998, Vol 33, Issue 8, p2179
- ISSN
0022-2461
- Publication type
Article
- DOI
10.1023/A:1004387607149