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- Title
A 2.25 ppm/°C High-Order Temperature-Segmented Compensation Bandgap Reference.
- Authors
Jia, Shichao; Ye, Tianchun; Xiao, Shimao
- Abstract
This paper presents a bandgap reference (BGR) with high-order temperature-segmented compensation. The compensation signal is generated using the voltage difference between two bipolar junction transistor (BJT) emitter bases, each of which individually loads a proportional-to-absolute temperature (PTAT) current and a zero-to-absolute temperature (ZTAT) current. The proposed BGR achieves a low-temperature coefficient (TC) over a wide temperature range. Simulations using the 0.18 μm Bipolar-CMOS-DMOS process show a typical TC of 2.25 ppm/°C from −40 °C to 125 °C. With an active area of 0.07986 mm2, it consumes 36 μW power under an operating voltage of 1 V. The integrated output noise from 0.1 Hz to 10 Hz is 81.1 μV.
- Subjects
JUNCTION transistors; BIPOLAR transistors; FIELD emission
- Publication
Electronics (2079-9292), 2024, Vol 13, Issue 8, p1499
- ISSN
2079-9292
- Publication type
Article
- DOI
10.3390/electronics13081499