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- Title
Dyakonov Surface Electromagnetic Waves in III‐Nitride Heterostructures.
- Authors
Karpov, Sergey Yu.
- Abstract
Lossless Dyakonov surface electromagnetic waves (DWs) that may be excited at the interfaces between non‐polar III‐nitride wurtzite semiconductors and optically isotropic dielectrics are considered theoretically. Because of stringent requirements on optical properties of the dielectrics suitable for DW excitation, those of them satisfying the existence conditions of surface electromagnetic waves are selected to operate in pair with AlGaN materials in a wide spectral range. DWs formed at the representative HfO2/AlN and SrTiO3/GaN interfaces are discusses in detail, including their propagation directions, angle bands of existence, and localization lengths of the surface waves near the interfaces. Dyakonov surface electromagnetic waves are predicted to exist at interfaces between non‐polar III‐nitride semiconductors and a number of optically isotropic dielectrics. Spectral range of their existence, inclination of propagation direction to C‐axis of semiconductors, localization length at the interface, and far‐field divergence are investigated for representative semiconductor/dielectric pairs in view of possible excitation/generation of Dyakonov waves in non‐polar nitride heterostructures.
- Subjects
ALUMINUM gallium nitride; SURFACE electromagnetic waves; NITRIDES; HETEROSTRUCTURES; EXISTENCE theorems
- Publication
Physica Status Solidi (B), 2019, Vol 256, Issue 3, pN.PAG
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201800609