We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Temperature Dependence of Low‐Energy Electron Beam Irradiation Effect on Optical Properties of MQW InGaN/GaN Structures.
- Authors
Yakimov, Eugene B.; Polyakov, Alexander Y.; Vergeles, Pavel S.
- Abstract
The low‐energy electron beam irradiation (LEEBI) effect at 80 K on the optical properties of InGaN/GaN multiple quantum well structures has been studied. It is shown that the new emission band formed under LEEBI is related to quantum wells. At 80 K the total intensity of new and initial emission bands does not change under LEEBI. The intensity of the 3.3 eV line is shown to increase due to LEEBI. The results obtained are explained assuming a modification of properties of small local regions, which strongly localize the excess carriers.
- Subjects
OPTICAL properties of gallium nitride; ELECTRON beams; CRYSTAL structure; TEMPERATURE effect; QUANTUM wells
- Publication
Physica Status Solidi (B), 2018, Vol 255, Issue 5, p1
- ISSN
0370-1972
- Publication type
Article
- DOI
10.1002/pssb.201700646