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- Title
A novel nanoscale-crossbar resistive switching memory using a copper chemical displacement technique.
- Authors
Lin, Li‐Min; Yang, Wen‐Luh; Lin, Yu‐Hsien; Hsiao, Yu‐Ping; Chin, Fun‐Tat; Kao, Ming‐Fang
- Abstract
Nanoscale-crossbar electrochemical-metallization (ECM) type resistive-switching random access memory (ReRAM) is considered promising candidates for next-generation non-volatile memory. However, performing nanoscale patterning with traditional Cu-based ECM ReRAM is quite challenging, because Cu is difficult to control and pattern using lithography and etching. In this study, a nanoscale Cu-based ReRAM with a Si3N4-SiO2 bi-layer was fabricated successfully through a novel Cu chemical displacement technique (Cu-CDT). Compared with other conventional Cu deposition techniques, the Cu-CDT exhibits numerous advantages including simplicity, low-temperature fabrication, low cost, and high displacement selectivity between poly-Si and the Si3N4-SiO2 bi-layer. Moreover, the developed nanoscale-crossbar Cu-CDT ReRAM device demonstrated stable switching and remarkable high-temperature data retention. Therefore, the Cu-CDT is an effective approach for overcoming Cu etching and patterning limitations.
- Subjects
RANDOM access memory; LITHOGRAPHY; RECORDS management; ETCHING; LITHOGRAPHY techniques; NANOTECHNOLOGY
- Publication
Physica Status Solidi. A: Applications & Materials Science, 2017, Vol 214, Issue 3, pn/a
- ISSN
1862-6300
- Publication type
Article
- DOI
10.1002/pssa.201600595