Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleKinetics and Mechanisms of High-Temperature Creep in Silicon Carbide: II, Chemically Vapor Deposited.AuthorsCARTER, C. H.; DAVIS, R. F.; BENTLEY, J.PublicationJournal of the American Ceramic Society, 1984, Vol 67, Issue 11, p732ISSN0002-7820Publication typeArticleDOI10.1111/j.1151-2916.1984.tb19510.x