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- Title
Nanostripe-Confined Catalyst Formation for Uniform Growth of Ultrathin Silicon Nanowires.
- Authors
Cheng, Yinzi; Gan, Xin; Liu, Zongguang; Wang, Junzhuan; Xu, Jun; Chen, Kunji; Yu, Linwei
- Abstract
Uniform growth of ultrathin silicon nanowire (SiNW) channels is the key to accomplishing reliable integration of various SiNW-based electronics, but remains a formidable challenge for catalytic synthesis, largely due to the lack of uniform size control of the leading metallic droplets. In this work, we explored a nanostripe-confined approach to produce highly uniform indium (In) catalyst droplets that enabled the uniform growth of an orderly SiNW array via an in-plane solid–liquid–solid (IPSLS) guided growth directed by simple step edges. It was found that the size dispersion of the In droplets could be reduced substantially from D cat p l = 20 ± 96 nm on a planar surface to only D cat n s = 88 ± 13 nm when the width of the In nanostripe was narrowed to W str = 100 nm, which could be qualitatively explained in a confined diffusion and nucleation model. The improved droplet uniformity was then translated into a more uniform growth of ultrathin SiNWs, with diameter of only D nw = 28 ± 4 nm, which has not been reported for single-edge guided IPSLS growth. These results lay a solid basis for the construction of advanced SiNW-derived field-effect transistors, sensors and display applications.
- Subjects
SILICON nanowires; NANOWIRES; FIELD-effect transistors; CATALYSTS; PHOTOCATHODES
- Publication
Nanomaterials (2079-4991), 2023, Vol 13, Issue 1, p121
- ISSN
2079-4991
- Publication type
Article
- DOI
10.3390/nano13010121