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- Title
Stimulated Emission and Optical Properties of Solid Solutions of Cu(In,Ga)Se<sub>2</sub> Direct Band Gap Semiconductors.
- Authors
Svitsiankou, I. E.; Pavlovskii, V. N.; Lutsenko, E. V.; Yablonskii, G. P.; Mudryi, A. V.; Borodavchenko, O. M.; Zhivulko, V. D.; Yakushev, M. V.; Martin, R.
- Abstract
Stimulated emission, optical properties, and structural characteristics of non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films deposited on soda lime glass substrates using co-evaporation of elements in a multistage process were investigated. X-ray diffraction analysis, scanning electron microscopy, X-ray spectral analysis with energy dispersion, low-temperature photoluminescence, optical transmittance and reflectance were used to study the films. Stimulated emission at low temperatures of ~20 K was found in non-irradiated and proton-irradiated Cu(In,Ga)Se2 thin films upon excitation by laser pulses of nanosecond duration with a threshold power density of ~20 kW/cm2. It was shown that the appearance and parameters of the stimulated emission depend strongly on the concentration of ion-induced defects in Cu(In,Ga)Se2 thin films.
- Subjects
SOLID solutions; BAND gaps; OPTICAL properties of semiconductors; STIMULATED emission; THIN films; OPTICAL properties
- Publication
Journal of Applied Spectroscopy, 2018, Vol 85, Issue 2, p267
- ISSN
0021-9037
- Publication type
Article
- DOI
10.1007/s10812-018-0643-3