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- Title
Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States.
- Authors
Jeon, Juhee; Cho, Kyoungah; Kim, Sangsig
- Abstract
In this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and charge carriers were accumulated (depleted) in these channels, generating the memory state "State 1 (State 0)". Read pulses of 40 ns read these states with a retention time of 3 s, and the potential barrier formation and carrier accumulation were influenced by these read pulses. The potential barriers were analyzed, using junction voltage and current density to explore the memory states. Moreover, FBFETs exhibited nondestructive readout characteristics during the read operation, which depended on the read voltage and pulse width.
- Subjects
FIELD-effect transistors; POTENTIAL barrier; RF values (Chromatography); CHARGE carriers; MEMORY; NONVOLATILE memory
- Publication
Nanomaterials (2079-4991), 2024, Vol 14, Issue 2, p210
- ISSN
2079-4991
- Publication type
Article
- DOI
10.3390/nano14020210