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- Title
p-i-n Photodiode Based on Silicon with Short Rise Time.
- Authors
Dobrovolsky, Yu. G.; Andreeva, O. P.; Gavrilyak, M. S.; Pidkamin, L. J.; Prokhorov, G. V.
- Abstract
The factors that influence the rise time of the photodiode are investigated and analyzed. Using the obtained results, a photodiode based on a high-ohmic silicon of p-type conductivity with a minimized rise time has been developed. The proposed construction. contains a contact on the back of the crystal of a photodiode, which is not continuous, but has a hole. Such a hole is the projection of a photosensitive element on the reverse side of the crystal of a photodiode. The value of the rise time of this photodiode is no more than 9 ns compared to 37 ns in the FD-255 A analogue.
- Subjects
PHOTODIODES; SEMICONDUCTOR diodes; NONMETALS; PIN photodiodes; SEMICONDUCTOR devices; ELECTRON tubes
- Publication
Journal of Nano- & Electronic Physics, 2018, Vol 10, Issue 4, p1
- ISSN
2077-6772
- Publication type
Article
- DOI
10.21272/jnep.10(4).04019