We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography.
- Authors
Ilahi, Bouraoui; Zribi, Jihene; Guillotte, Maxime; Arès, Richard; Aimez, Vincent; Morris, Denis
- Abstract
We report on Chemical Beam Epitaxy (CBE) growth of wavelength tunable InAs/GaAs quantum dots (QD) based superluminescent diode’s active layer suitable for Optical Coherence Tomography (OCT). The In-flush technique has been employed to fabricate QD with controllable heights, from 5 nm down to 2 nm, allowing a tunable emission band over 160 nm. The emission wavelength blueshift has been ensured by reducing both dots’ height and composition. A structure containing four vertically stacked height-engineered QDs have been fabricated, showing a room temperature broad emission band centered at 1.1 μm. The buried QD layers remain insensitive to the In-flush process of the subsequent layers, testifying the reliability of the process for broadband light sources required for high axial resolution OCT imaging.
- Subjects
INDIUM arsenide; GALLIUM arsenide; QUANTUM dots; CHEMICAL beam epitaxy; OPTICAL coherence tomography; SUPERLUMINESCENT diodes
- Publication
Materials (1996-1944), 2016, Vol 9, Issue 7, p511
- ISSN
1996-1944
- Publication type
Article
- DOI
10.3390/ma9070511