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- Title
Improvement of Breakdown Characteristics of a GaN HEMT with AlGaN Buffer Layer.
- Authors
Chen, Y.; Jiang, Y.; Xu, P.Q.; Ma, Z.G.; Wang, X.L.; He, T.; Peng, M.Z.; Luo, W.J.; Liu, X.Y.; Wang, L.; Jia, H.Q.; Chen, H.
- Abstract
High-electron-mobility transistors (HEMTs) with a highly resistive two-layer buffer layer (AlGaN/GaN) were grown on 6H-SiC substrates by metalorganic chemical vapor deposition. The characteristics were compared with those of conventional HEMTs utilizing GaN as the high-resistivity buffer. The results of x-ray diffraction and atomic force microscopy indicate that the crystal quality of the HEMT heterostructure is not deteriorated by the AlGaN buffer layer. The direct-current (DC) characteristics of the HEMTs with the two different structures are similar, while the off-state breakdown voltage is enhanced and the mobility of the two-dimensional electron gas is improved by the AlGaN buffer layer. The reasons for the effects of the AlGaN buffer layer are discussed systematically.
- Subjects
MODULATION-doped field-effect transistors; ELECTRIC properties of aluminum gallium nitride; ELECTRIC properties of gallium nitride; ELECTRIC breakdown; ELECTRIC discharges; BREAKDOWN voltage; METAL organic chemical vapor deposition
- Publication
Journal of Electronic Materials, 2012, Vol 41, Issue 3, p471
- ISSN
0361-5235
- Publication type
Article
- DOI
10.1007/s11664-011-1864-x