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- Title
NOR and NAND gates using two photon absorption in silicon wire waveguide.
- Authors
Roy Chowdhury, Anirban; Dutta, Ivy; Kumbhakar, Dharmadas
- Abstract
Ultrafast all-optical NOR gate based on two photon absorption (2PA) process in SOI waveguide is already established. We have designed NAND gate also based on this process with a novel waveguide coupler structure. Power attenuation due to 2PA process and the working of these gates is developed with FDTD simulation. Dominant 2PA process is incorporated in FDTD update equations and it is shown that the influence of high intensity pump pulses on a different frequency continuous probe beam can be utilized to form NOR as well as NAND gates.
- Subjects
NOR gates; NAND gates; LIGHT absorption; ELECTRIC wire; WAVEGUIDES; SILICON-on-insulator technology; FINITE difference time domain method
- Publication
Optical & Quantum Electronics, 2013, Vol 45, Issue 12, p1319
- ISSN
0306-8919
- Publication type
Article
- DOI
10.1007/s11082-013-9755-4