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HgCdTe-Based 640 × 512 Matrix Midwave Infrared Photodetector.
Published in:
Journal of Communications Technology & Electronics, 2020, v. 65, n. 3, p. 316, doi. 10.1134/S1064226920030122
By:
- Marchishin, I. V.;
- Sabinina, I. V.;
- Sidorov, G. Yu.;
- Yakushev, M. V.;
- Varavin, V. S.;
- Remesnik, V. G.;
- Predein, A. V.;
- Dvoretsky, S. A.;
- Vasil'ev, V. V.;
- Sidorov, Yu. G.;
- Marin, D. V.;
- Kovchavtsev, A. P.;
- Latyshev, A. V.
Publication type:
Article
Photodetectors with 384 × 288 Matrix Elements for the Infrared Range of 8–10 Microns.
Published in:
Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1024, doi. 10.1134/S1064226919090171
By:
- Zverev, A. V.;
- Suslyakov, A. O.;
- Sabinina, I. V.;
- Sidorov, G. Yu.;
- Yakushev, M. V.;
- Kuzmin, V. D.;
- Varavin, V. S.;
- Remesnik, V. G.;
- Makarov, Yu. S.;
- Predein, A. V.;
- Gorshkov, D. V.;
- Dvoretsky, S. A.;
- Vasil'ev, V. V.;
- Sidorov, Yu. G.;
- Latyshev, A. V.;
- Kremis, I. I.
Publication type:
Article
A Megapixel Matrix Photodetector of the Middle Infrared Range.
Published in:
Journal of Communications Technology & Electronics, 2019, v. 64, n. 9, p. 1011, doi. 10.1134/S1064226919090043
By:
- Bazovkin, V. M.;
- Varavin, V. S.;
- Vasil'ev, V. V.;
- Glukhov, A. V.;
- Gorshkov, D. V.;
- Dvoretsky, S. A.;
- Kovchavtsev, A. P.;
- Makarov, Yu. S.;
- Marin, D. V.;
- Mzhelsky, I. V.;
- Polovinkin, V. G.;
- Remesnik, V. G.;
- Sabinina, I. V.;
- Sidorov, Yu. G.;
- Sidorov, G. Yu.;
- Stroganov, A. S.;
- Tsarenko, A. V.;
- Yakushev, M. V.;
- Latyshev, A. V.
Publication type:
Article
Formation of Acceptor Centers in CdHgTe as a Result of Water and Heat Treatments.
Published in:
Semiconductors, 2021, v. 55, n. 5, p. 461, doi. 10.1134/S1063782621040175
By:
- Sidorov, G. Yu.;
- Sidorov, Yu. G.;
- Shwets, V. A.;
- Varavin, V. S.
Publication type:
Article
Dependence of the electrical parameters of MBE-grown Cd x Hg1 − x Te films on the level of doping with indium.
Published in:
Semiconductors, 2008, v. 42, n. 6, p. 648, doi. 10.1134/S1063782608060031
By:
- Varavin, V. S.;
- Dvoretskiĭ, S. A.;
- Ikusov, D. G.;
- Mikhaĭlov, N. N.;
- Sidorov, Yu. G.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Effect of the arsenic cracking zone temperature on the efficiency of arsenic incorporation in CdHgTe films in molecular-beam epitaxy.
Published in:
Semiconductors, 2008, v. 42, n. 6, p. 651, doi. 10.1134/S1063782608060043
By:
- Sidorov, G. Yu.;
- Mikhaĭlov, N. N.;
- Varavin, V. S.;
- Ikusov, D. G.;
- Sidorov, Yu. G.;
- Dvoretskiĭ, S. A.
Publication type:
Article
The Effect of the Growth Temperature on the Passivating Properties of the Al2O3 Films Formed by Atomic Layer Deposition on the CdHgTe Surface.
Published in:
Technical Physics Letters, 2020, v. 46, n. 8, p. 741, doi. 10.1134/S1063785020080064
By:
- Gorshkov, D. V.;
- Sidorov, G. Yu.;
- Sabinina, I. V.;
- Sidorov, Yu. G.;
- Marin, D. V.;
- Yakushev, M. V.
Publication type:
Article
Wet Chemical Methods of HgCdTe Surface Treatment.
Published in:
Journal of Structural Chemistry, 2023, v. 64, n. 3, p. 519, doi. 10.1134/S0022476623030150
By:
- Zakirov, E. R.;
- Kesler, V. G.;
- Sidorov, G. Y.;
- Golyashov, V. A.;
- Tereshchenko, O. E.;
- Marin, D. V.;
- Yakushev, M. V.
Publication type:
Article
Quantitative Assay of B. pertussis Lipopolysaccharide.
Published in:
Bulletin of Experimental Biology & Medicine, 2022, v. 172, n. 6, p. 718, doi. 10.1007/s10517-022-05463-w
By:
- Nazirov, M. R.;
- Poddubikov, A. V.;
- Kukes, V. G.;
- Sidorov, N. G.;
- Parfenova, O. K.
Publication type:
Article
Admittance of barrier nanostructures based on MBE HgCdTe.
Published in:
Applied Nanoscience, 2022, v. 12, n. 3, p. 403, doi. 10.1007/s13204-020-01636-z
By:
- Izhnin, I. I.;
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Y.;
- Yakushev, M. V.
Publication type:
Article
Unipolar superlattice structures based on MBE HgCdTe for infrared detection.
Published in:
Applied Nanoscience, 2020, v. 10, n. 12, p. 4571, doi. 10.1007/s13204-020-01297-y
By:
- Izhnin, I. I.;
- Kurbanov, K. R.;
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Y.
Publication type:
Article
A new design of scanning IR detectors.
Published in:
Opto-Electronics Review, 2020, v. 28, n. 2, p. 93, doi. 10.24425/opelre.2020.132505
By:
- Dvoretsky, S. A.;
- Kovchavtsev, A. P.;
- Lee, I. I.;
- Polovinkin, V. G.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Construction, heterological expression and a simple purification of the BP region of the pneumococcal surface protein A fused in different orientations to the chemotaxis adaptor protein CheW from Thermotoga petrophila.
Published in:
Electronic Journal of Biotechnology, 2024, v. 71, p. 19, doi. 10.1016/j.ejbt.2024.05.001
By:
- Grishin, Dmitry V.;
- Sidorov, Nikita G.;
- Parfenova, Olga K.;
- Kurkin, Roman V.;
- Kasap, Ekaterina Y.
Publication type:
Article
The electrical characteristics of MBE n-HgCdTe ( x = 0.29-0.31) MIS structures with sharp inhomogeneities in composition.
Published in:
Russian Physics Journal, 2011, v. 54, n. 3, p. 263, doi. 10.1007/s11182-011-9609-0
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Varavin, V. S.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Sidorov, Yu. G.
Publication type:
Article
Electrophysical characteristics of MIS structures based on graded band-gap MBE HgCdTe with grown in situ CdTe as a dielectric.
Published in:
Russian Physics Journal, 2010, v. 53, n. 2, p. 148, doi. 10.1007/s11182-010-9399-9
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Varavin, V. S.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Sidorov, Yu. G.;
- Vasil'ev, V. V.;
- Yakushev, M. V.
Publication type:
Article
The growth of high-quality MCT films by MBE using in-situ ellipsometry.
Published in:
Crystal Research & Technology, 1994, v. 29, n. 7, p. 931, doi. 10.1002/crat.2170290703
By:
- Svitashev, K. K.;
- Dvoretsky, S. A.;
- Sidorov, Yu. G.;
- Shvets, V. A.;
- Mardezhov, A. S.;
- Nis, I. E.;
- Varavin, V. S.;
- Liberman, V.;
- Remesnik, V. G.
Publication type:
Article
Solid-phase catalytic reactions of tritium with carbohydrates: 3. Mechanism of isomerization of epimeric pentoses in the course of solid-phase catalytic hydrogenation with tritium.
Published in:
Radiochemistry, 2007, v. 49, n. 1, p. 100, doi. 10.1134/S1066362207010183
By:
- Baitov, A. A.;
- Sidorov, G. V.;
- Myasoedov, N. F.
Publication type:
Article
Solid-phase catalytic reactions of tritium with carbohydrates: 2. Influence of the support surface area on the solid-phase catalytic hydrogenation of biologically active compounds with tritium.
Published in:
Radiochemistry, 2007, v. 49, n. 1, p. 97, doi. 10.1134/S1066362207010171
By:
- Baitov, A. A.;
- Sidorov, G. V.;
- Myasoedov, N. F.
Publication type:
Article
Synthesis of tritium-labeled 2′,3′-dideoxy-2′,3′-didehydrothymidine and 3′-azidothymidine-5′-phosphamide.
Published in:
Radiochemistry, 2006, v. 48, n. 5, p. 515, doi. 10.1134/S1066362206050213
By:
- Sidorov, G. V.;
- Myasoedov, N. F.
Publication type:
Article
Isotope exchange reactions of trans-zeatin with tritium.
Published in:
Radiochemistry, 2006, v. 48, n. 5, p. 517, doi. 10.1134/S1066362206050225
By:
- Sidorov, G. V.;
- Myasoedov, N. F.
Publication type:
Article
A Comparative Study of the Reactions of Thermally Activated Tritium with Sugars and Diazines and of Solid-Phase Catalytic Hydrogenation of These Compounds with Tritium.
Published in:
Radiochemistry, 2005, v. 47, n. 3, p. 311, doi. 10.1007/s11137-005-0095-5
By:
- Sidorov, G.;
- Badun, G.;
- Baitova, E.;
- Baitov, A.;
- Platoshina, A.;
- Myasoedov, N.;
- Fedoseev, V.
Publication type:
Article
Solid-Phase Catalytic Reactions of Tritium with Carbohydrates: 1. Influence of Temperature, Catalysts, and Solid Phase Composition on Solid-Phase Catalytic Hydrogenation of D-Ribose with Tritium.
Published in:
Radiochemistry, 2005, v. 47, n. 2, p. 201, doi. 10.1007/s11137-005-0074-x
By:
- Baitov, A. A.;
- Sidorov, G. V.;
- Myasoedov, N. F.
Publication type:
Article
Isotope Exchange of Azidothymidine with Tritium.
Published in:
Radiochemistry, 2003, v. 45, n. 1, p. 87, doi. 10.1023/A:1022385922249
By:
- Sidorov, G. V.;
- Zverkov, Yu. B.;
- Myasoedov, N. F.
Publication type:
Article
Solid-Phase Catalytic Hydrogenation of Uracil with Tritium: Synthesis of Tritium-Labeled β-Alanine.
Published in:
Radiochemistry, 2002, v. 44, n. 3, p. 295, doi. 10.1023/A:1020367009597
By:
- Sidorov, G.;
- Myasoedov, N.
Publication type:
Article
Solid-Phase Catalytic Hydrogenation of Orotic Acid and 5-Bromouracil with Tritium on a Copper Catalyst.
Published in:
Radiochemistry, 2002, v. 44, n. 3, p. 298, doi. 10.1023/A:1020319126436
By:
- Sidorov, G.;
- Myasoedov, N.
Publication type:
Article
Dark Current Components of nB(SL)n Structures Based on HgCdTe for a Wide Range of Bias Voltages.
Published in:
Journal of Communications Technology & Electronics, 2023, v. 68, p. S132, doi. 10.1134/S1064226923140176
By:
- Voitsekhovskii, A. V.;
- Dzyadukh, S. M.;
- Gorn, D. I.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Investigation of Characteristics of MIS Structures Based on MBE n-HgCdTe NBνN Barrier Structures by Admittance Spectroscopy.
Published in:
Journal of Communications Technology & Electronics, 2023, v. 68, n. 9, p. 1036, doi. 10.1134/S1064226923090279
By:
- Voitsekhovskii, A. V.;
- Dzyadukh, S. M.;
- Gorn, D. I.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Experimental Study of NBνN Barrier Structures Based on MBE n-HgCdTe for MWIR and LWIR Photodetectors.
Published in:
Journal of Communications Technology & Electronics, 2023, v. 68, n. 3, p. 334, doi. 10.1134/S1064226923030208
By:
- Voitsekhovskii, A. V.;
- Dzyadukh, S. M.;
- Gorn, D. I.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Diffusion Limitation of Dark Current in the nBn Structures Based on the MBE HgCdTe.
Published in:
Journal of Communications Technology & Electronics, 2022, v. 67, n. 3, p. 308, doi. 10.1134/S1064226922030172
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Investigation of the Differential Resistance of MIS Structures Based on n-Hg0.78Cd0.22Te with Near-Surface Graded-Gap Layers.
Published in:
Journal of Communications Technology & Electronics, 2021, v. 66, n. 3, p. 337, doi. 10.1134/S1064226921030219
By:
- Voitsekhovskii, A. V.;
- Kulchitskii, N. A.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Varavin, V. S.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Yakushev, M. V.;
- Sidorov, G. Yu.
Publication type:
Article
Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy.
Published in:
Journal of Communications Technology & Electronics, 2019, v. 64, n. 3, p. 289, doi. 10.1134/S1064226919030197
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, G. Yu.;
- Yakushev, M. V.
Publication type:
Article
Linear Minimax Filtering of a Stationary Random Process under the Condition of the Interval Fuzziness in the State Matrix of the System with a Restricted Variance.
Published in:
Journal of Communications Technology & Electronics, 2018, v. 63, n. 8, p. 902, doi. 10.1134/S106422691807015X
By:
- Sidorov, I. G.
Publication type:
Article
Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown <italic>n</italic>-Hg1 - <italic>x</italic>Cd<italic>x</italic>Te (<italic>x</italic> = 0.22-0.23) with the Al2O3 Insulator.
Published in:
Journal of Communications Technology & Electronics, 2018, v. 63, n. 3, p. 281, doi. 10.1134/S106422691803021X
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadukh, S. M.;
- Vasil’ev, V. V.;
- Varavin, V. S.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Yakushev, M. V.;
- Sidorov, G. Yu.
Publication type:
Article
Current Generation in Pd/InP Structures in Hydrogen Medium.
Published in:
Semiconductors, 2024, v. 58, n. 4, p. 349, doi. 10.1134/S1063782624040134
By:
- Shutaev, V. A.;
- Sidorov, V. G.;
- Grebenshchikova, E. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Current Generation in Pd/InP Structures in Hydrogen Medium.
Published in:
Semiconductors, 2023, v. 57, n. 8, p. 369, doi. 10.1134/S1063782623090166
By:
- Shutaev, V. A.;
- Grebenshchikova, E. A.;
- Sidorov, V. G.;
- Yakovlev, Yu. P.
Publication type:
Article
Features of MIS Structures Based on Insulating PbSnTe:In Films with the Composition in the Vicinity of the Band Inversion Related to Their Ferroelectric Properties.
Published in:
Semiconductors, 2020, v. 54, n. 10, p. 1325, doi. 10.1134/S1063782620100164
By:
- Klimov, A. E.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Gorshkov, D. V.;
- Ishchenko, D. V.;
- Matyushenko, E. V.;
- Neizvestny, I. G.;
- Sidorov, G. Yu.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Tereshchenko, O. E.;
- Epov, V.S.
Publication type:
Article
Influence of Hydrogen on the Impedance of Pd/Oxide/InP Structures.
Published in:
Semiconductors, 2020, v. 54, n. 6, p. 658, doi. 10.1134/S1063782620060160
By:
- Shutaev, V. A.;
- Grebenshchikova, E. A.;
- Sidorov, V. G.;
- Kompan, M. E.;
- Yakovlev, Yu. P.
Publication type:
Article
Influence of Hydrogen on the Electrical Properties of Pd/InP Structures.
Published in:
Semiconductors, 2019, v. 53, n. 10, p. 1389, doi. 10.1134/S106378261910018X
By:
- Shutaev, V. A.;
- Sidorov, V. G.;
- Grebenshchikova, E. A.;
- Vlasov, L. K.;
- Pivovarova, A. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Surface Сonductivity Dynamics in PbSnTe:In Films in the Vicinity of a Band Inversion.
Published in:
Semiconductors, 2019, v. 53, n. 9, p. 1182, doi. 10.1134/S1063782619090094
By:
- Klimov, A. E.;
- Akimov, A. N.;
- Akhundov, I. O.;
- Golyashov, V. A.;
- Gorshkov, D. V.;
- Ishchenko, D. V.;
- Sidorov, G. Yu.;
- Suprun, S. P.;
- Tarasov, A. S.;
- Epov, V. S.;
- Tereshchenko, O. E.
Publication type:
Article
Effect of the Hydrogen Concentration on the Pd/n-InP Schottky Diode Photocurrent.
Published in:
Semiconductors, 2019, v. 53, n. 2, p. 234, doi. 10.1134/S1063782619020118
By:
- Grebenshchikova, E. A.;
- Sidorov, V. G.;
- Shutaev, V. A.;
- Yakovlev, Yu. P.
Publication type:
Article
Determining the Hydrogen Concentration from the Photovoltage of Pd-Oxide-InP MIS Structures.
Published in:
Semiconductors, 2018, v. 52, n. 10, p. 1303, doi. 10.1134/S1063782618100044
By:
- Grebenshchikova, E. A.;
- Salikhov, Kh. M.;
- Sidorov, V. G.;
- Shutaev, V. A.;
- Yakovlev, Yu. P.
Publication type:
Article
CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures.
Published in:
Semiconductors, 2016, v. 50, n. 12, p. 1626, doi. 10.1134/S1063782616120265
By:
- Varavin, V.;
- Vasilyev, V.;
- Guzev, A.;
- Dvoretsky, S.;
- Kovchavtsev, A.;
- Marin, D.;
- Sabinina, I.;
- Sidorov, Yu.;
- Sidorov, G.;
- Tsarenko, A.;
- Yakushev, M.
Publication type:
Article
The influence of hydrogenation on the electrical properties of the CdHgTe epitaxial structures.
Published in:
Semiconductors, 2011, v. 45, n. 3, p. 397, doi. 10.1134/S1063782611030237
By:
- Varavin, V.;
- Sidorov, G.;
- Garifullin, M.;
- Vishnyakov, A.;
- Sidorov, Yu.
Publication type:
Article
Stimulated radiation at a wavelength of 2.5 μm at room temperature from optically excited Cd xHg1 − xTe-based structures.
Published in:
Semiconductors, 2010, v. 44, n. 4, p. 457, doi. 10.1134/S1063782610040081
By:
- Andronov, A. A.;
- Nozdrin, Yu. N.;
- Okomel'kov, A. V.;
- Varavin, V. S.;
- Mikhailov, N. N.;
- Sidorov, G. Yu.
Publication type:
Article
Formation of acceptor centers under the action of redox media on the surface of Cd xHg1 − xTe films.
Published in:
Semiconductors, 2009, v. 43, n. 13, p. 1641, doi. 10.1134/S1063782609130041
By:
- Varavin, V.;
- Sidorov, G.
Publication type:
Article
Electrical properties of n-HgCdTe heteroepitaxial layers modified by ion etching.
Published in:
Semiconductors, 2008, v. 42, n. 12, p. 1413, doi. 10.1134/S1063782608120075
By:
- Pociask, M.;
- Izhnin, I. I.;
- Dvoretsky, S. A.;
- Mikhailov, N. N.;
- Sidorov, Yu. G.;
- Varavin, V. S.;
- Mynbaev, K. D.;
- Ivanov-Omskii, V. I.
Publication type:
Article
Properties of MIS structures based on graded-gap HgCdTe grown by molecular beam epitaxy.
Published in:
Semiconductors, 2008, v. 42, n. 11, p. 1298, doi. 10.1134/S1063782608110109
By:
- Voitsekhovskii, A. V.;
- Nesmelov, S. N.;
- Dzyadookh, S. M.;
- Varavin, V. S.;
- Dvoretskii, S. A.;
- Mikhailov, N. N.;
- Sidorov, Yu. G.;
- Vasiliev, V. V.
Publication type:
Article
Magnetic-Field Dependences of the Conductivity and Hall Factor in MBE-Grown CdXHg1 – XTe Layers.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1168, doi. 10.1134/1.1808822
By:
- Bakhtin, P. A.;
- Dvoretskii, S. A.;
- Varavin, V. S.;
- Korobkin, A. P.;
- Mikhailov, N. N.;
- Sidorov, Yu. G.
Publication type:
Article
Effect of Low-Temperature Annealing on Electrical Properties of n-HgCdTe.
Published in:
Semiconductors, 2004, v. 38, n. 10, p. 1172, doi. 10.1134/1.1808823
By:
- Bakhtin, P. A.;
- Dvoretskii, S. A.;
- Varavin, V. S.;
- Korobkin, A. P.;
- Mikhailov, N. N.;
- Sabinina, I. V.;
- Sidorov, Yu. G.
Publication type:
Article
Changes in the Role of Mammals in Human Hydrophobia Infecting in Russia over the Historically Observable Period of the 16th to 21st Centuries.
Published in:
Biology Bulletin, 2023, v. 50, n. 8, p. 2019, doi. 10.1134/S1062359023080265
By:
- Sidorov, G. N.;
- Poleshchuk, E. M.;
- Sidorova, D. G.
Publication type:
Article

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