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- Title
Measuring femtosecond lifetimes of free charge carriers in gallium arsenide.
- Authors
Levashova, A.; Pastor, A.; Serdobintsev, P.; Chaldyshev, V.
- Abstract
Peculiarities of the measurement of femtosecond lifetimes of free charge carriers in gallium arsenide grown by the method of molecular beam epitaxy are considered. The carrier lifetime is determined by a variant of the pump-probe method in which the pumping and probing radiation beams are incident onto the semiconductor sample surface at the Brewster angle. The proposed variant ensures the detection of a change in the induced refractive index even in the case of very small response signals, thus providing for a high sensitivity of measurements. It is shown that the relative signal changes near the Brewster angle reach a maximum level.
- Subjects
GALLIUM arsenide; FEMTOSECOND pulse measurement; MOLECULAR beam epitaxy; BREWSTER'S angle; SENSITIVITY analysis; REFRACTIVE index
- Publication
Technical Physics Letters, 2014, Vol 40, Issue 6, p513
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S1063785014060224