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- Title
Study of the structural quality of GaN epitaxial layers obtained by hydride vapor phase epitaxy using a low-temperature buffer layer.
- Authors
Belogorohov, I.; Donskov, A.; Knyazev, S.; Kozlova, Yu.; Pavlov, V.; Yugova, T.
- Abstract
The structural quality and surface morphology of low-temperature (LT) buffer layers after deposition and high-temperature (HT) annealing and HT GaN layers grown on LT buffer layers by hydride vapor phase epitaxy have been investigated. The HCl flow rate through the Ga source varied from 0.3 to 2 L/h, and the carrier gas N flow rate was either 18 or 60 L/h. It is established that the structural quality of LT GaN buffer is determined to a great extent by the HCl and N flow rates; the best results are obtained at HCl and N flow rates of 0.3 and 18 L/h, respectively. These GaN layers are characterized by a mirror surface and a rocking curve half-width of 360". It is suggested that the layer structure is improved due to the increase in the lateral growth rate.
- Subjects
GALLIUM nitride; EPITAXIAL layers; VAPOR phase epitaxial growth; METALS at low temperatures; SURFACE morphology
- Publication
Crystallography Reports, 2015, Vol 60, Issue 6, p889
- ISSN
1063-7745
- Publication type
Article
- DOI
10.1134/S1063774515060036