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- Title
Characterization of palladium-related defects in silicon.
- Authors
Dogra, R.; Byrne, A. P.; Brett, D. A.; Ridgway, M. C.
- Abstract
Using 100Pd/100Rh probes, perturbed angular correlation measurements were performed to study Pd-related defects in Si as a function of dopant concentration and dopant type. Pd-vacancy and Pd-B complexes were identified by their characteristic electric field gradients in highly doped n- and p-type Si, respectively. Both pairs exhibited a T3/2 temperature dependence of their electric field gradients.
- Subjects
PALLADIUM (Game); SILICON; ANGULAR correlations (Nuclear physics); NUCLEAR reactions; PAIRING correlations (Nuclear physics)
- Publication
Hyperfine Interactions, 2007, Vol 177, Issue 1-3, p33
- ISSN
0304-3843
- Publication type
Article
- DOI
10.1007/s10751-008-9618-8