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- Title
Quantitative analysis of optical and recombination losses in Cu(In,Ga)Se thin-film solar cells.
- Authors
Kosyachenko, L.; Lytvynenko, V.; Maslyanchuk, O.
- Abstract
Optical and recombination losses in a Cu(In,Ga)Se thin-film solar cell with a band gap of 1.36-1.38 eV are theoretically analyzed. The optical transmittance of the ZnO and CdS layers through which the radiation penetrates into the absorbing layer is determined. Using optical constants, the optical loss caused by reflection at the interfaces (7.5%) and absorption in the ZnO and CdS layers (10.2%) are found. To calculate the recombination loss, the spectral distribution of the quantum efficiency of CdS/CuInGaSe is investigated. It is demonstrated that, taking the drift and diffusion components of recombination at the front and rear surfaces of the absorber into account, the quantum efficiency spectra of the investigated solar cell can be analytically described in detail. The real parameters of the solar cell are determined by comparing the calculated results and experimental data. In addition, the losses caused by the recombination of photogenerated carriers at the front and rear surfaces of the absorbing layer (1.8% and <0.1%, respectively), at its neutral part (7.6%), and in the space-charge region of the p-n heterojunction (1.0%) are determined. A correction to the parameters of Cu(In,Ga)Se is proposed, which enhances the charge-accumulation efficiency.
- Subjects
SEMICONDUCTOR thin films; COPPER compounds; SELENIDES; SOLAR cells; OPTICAL properties of semiconductors; QUANTITATIVE research; OPTICAL losses
- Publication
Semiconductors, 2016, Vol 50, Issue 4, p508
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/S1063782616040138