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- Title
Planar silicon structure in application to the modulation of infrared radiation.
- Authors
PIOTROWSKI, TADEUSZ; TOMASZEWSKI, DANIEL; WĘGRZECKI, MACIEJ; MALYUTENKO, VLADIMIR K.; TYKHONOV, ANDREW M.
- Abstract
We report on the performance of planar silicon diodes, operating at a temperature range above 300 K and emitting infrared radiation. The results present a theoretical analysis and experimental verification of an optimization aimed at a maximal difference between emissivity of this structure for cases with and without forward bias applied to p-n junction. Several advantages of the structures were shown: wide emission spectrum (3-12 µm), short rise-fall time (300 µs), high operating temperature (~400 K). Spatial distribution of photonic radiation emitted by a silicon structure obtained by a thermovision camera is compared with computer simulation distribution of carrier concentration. These planar sources can be used as easily controlled sources of infrared radiation in a wide spectral range, image simulators, e.g., dynamic scene simulation devices with frame frequencies well above 200 Hz and for measurements of thermovision camera dynamic parameters.
- Subjects
SILICON diodes; DIODES; INFRARED radiation; PHOTONICS; COMPUTER simulation
- Publication
Optica Applicata, 2011, Vol 41, Issue 2, p333
- ISSN
0078-5466
- Publication type
Article