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- Title
Lowering The Bit‐Energy of Electro‐Optic Modulators Via Polarization‐Phase Modulation in Thin‐Film BaTiO<sub>3</sub> Ferroelectric Crystal Waveguide.
- Authors
Sun, Na; Sun, DeGui; Wu, Di; Guo, Yinghui; Fan, Yulong; Zou, Fang; Pu, Mingbo; Luo, Xiangang
- Abstract
The electro‐optic (EO) modulator is a crucial device for achieving high‐speed optical communication and optical interconnection by loading the high‐frequency electrical signals onto the optical carrier. To date, modern communication technique demands for a low energy consumption for green data center establishment. In this work, a thin‐film BaTiO3 crystal waveguide Mach–Zehnder interferometer (MZI) type EO intensity modulator is experimentally implemented and its dynamic‐polarization interference process involving a phase‐polarization modulation (PPM) scheme other than conventional optical phase modulation (OPM) is carefully analyzed. Its findings show that the PPM scheme can efficiently reduce the half‐wave voltage (Vπ${V}_\pi$) and the equivalent half‐wave voltage (Veπ${V}_{e\pi }$) of the modulator. Then, a new theory of deriving the bit energy (BE) from Veπ${V}_{e\pi }$ is put forward, which has proven that the BE value under PPM is lower than the OPM counterpart. The EO modulator prototype featuring a length of 1.4 mm, Veπ${V}_{e\pi }$= 3.0 V and BE = 1.2 pJ/bit match well with the numerical calculations, thus validating the feasibility to achieve a BE<0.2 pJ/bit for an EO modulator through optimization of the electrode gap and state‐of‐the‐art fabrication techniques in the near future.
- Subjects
UNITED States. Office of Personnel Management; FERROELECTRIC crystals; OPTICAL interconnects; SUSTAINABLE consumption; OPTICAL communications; OPTICAL modulation; WAVEGUIDES; FERROELECTRIC ceramics; FERROELECTRIC thin films
- Publication
Laser & Photonics Reviews, 2024, Vol 18, Issue 3, p1
- ISSN
1863-8880
- Publication type
Article
- DOI
10.1002/lpor.202300937