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- Title
Preparation and Thermoelectric Properties of Zn‐Doped Sn‐Based Type‐VIII Single‐Crystalline Clathrate via a Grey Sn‐Flux Method.
- Authors
Shen, Lanxian; Li, Decong; Deng, Shuping; Tang, Yu; Chen, Zhong; Liu, Zuming; Yang, Peizhi; Deng, Shukang
- Abstract
Abstract: A single‐crystalline samples of Zn‐substituted type‐VIII clathrate Ba8Ga16Sn30 with n‐type carriers by <italic>α</italic>‐Sn flux method according to the formula Ba8Ga16Zn<italic>x</italic>Sn30 (<italic>x</italic> = 0, 0.5, 1, and 1.5) is grown. It is found that as the amount of Zn increases from 0.025 to 0.155, the content of Ga decreases from 15.18 to 14.72, indicating Zn atoms preferentially replacing Ga. The carrier concentrations of obtained samples vary from 3.55 × 1019 to 5.53 × 1019 cm−3 as carrier mobility changes from 14.7 to 20.9 cm2 · V−1 · s−1 at room temperature. Meanwhile, the endothermic peak temperature for all samples is approximately 519 °C, which is slightly lower than that of the previous experimental reported. For all samples, their effective mass <italic>m</italic>*/<italic>m</italic>0 are lower than that prepared by <italic>β</italic>‐Sn, indicating that the band structure near the conduction band minima is affected. As a result, the sample with <italic>x</italic> = 1.5 obtains the higher power factor with the maximum value of 1.07 × 10−3 W m−1 K−2 at 568 K and the largest <italic>ZT</italic> value of 0.63 at 537 K.
- Subjects
ELECTRIC properties of metals; DOPING agents (Chemistry); ZINC compounds; TEMPERATURE effect; CLATHRATE compounds
- Publication
Crystal Research & Technology, 2018, Vol 53, Issue 2, p1
- ISSN
0232-1300
- Publication type
Article
- DOI
10.1002/crat.201700150