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- Title
Impact on generation and recombination rate in Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) solar cell for Ag<sub>2</sub>S and In<sub>2</sub>Se<sub>3</sub> buffer layers with CuSbS<sub>2</sub> back surface field layer.
- Authors
Chauhan, Pratibha; Agarwal, Surbhi; Srivastava, Vaibhava; Maurya, Sadanand; Hossain, M. Khalid; Madan, Jaya; Yadav, Rajesh Kumar; Lohia, Pooja; Dwivedi, Dilip Kumar; Alothman, Asma A.
- Abstract
For photovoltaic (PV) applications, the earth‐abundant and non‐hazardous Kesterite Cu2ZnSnS4 (CZTS) is a possible substitute for chalcopyrite copper indium gallium selenide (CIGS). This research offers insight into the most innovative method for improving the performance of Kesterite solar cells (SCs) by using CuSbS2 back surface field (BSF) and Ag2S and In2Se3 as buffer layers, focuses on aligning energy bands, reducing non‐radiative recombination, and improving open‐circuit voltage (Voc). The proposed cells are Ni/CuSbS2/CZTS/In2Se3/ITO/Al and Ni/CuSbS2/CZTS/Ag2S/ITO/Al by adding interfaces. The optimized CZTS SCs with In2Se3 achieve a short‐circuit current density (Jsc) of 30.274 mA/cm2, fill factor (FF) of 89.15%, power conversion efficiency (PCE) of 31.67%, and Voc of 1.173 V. With the Ag2S buffer layer, PCE is 31.02%, FF is 88.61%, Jsc is 30.245 mA/cm2, and Voc is 1.157 V. These results depict the potential of CZTS‐based SCs with improved performance compared with conventional structures.
- Subjects
BUFFER layers; PHOTOVOLTAIC power systems; SOLAR cells; COPPER-zinc alloys; COPPER indium selenide; OPEN-circuit voltage; SHORT-circuit currents
- Publication
Progress in Photovoltaics, 2024, Vol 32, Issue 3, p156
- ISSN
1062-7995
- Publication type
Article
- DOI
10.1002/pip.3743