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- Title
Diagnostics of highly doped czochralski-grown silicon crystals.
- Authors
Kyutt, R. N.; Ruvimov, S. S.; Shulpina, I. L.
- Abstract
It is shown that effective diagnostics of strongly doped Czochralski-grown silicon single crystals in the initial (as-grown) state is provided by methods based on the interference phenomena of dynamic x-ray diffraction: the Lang section topography and the Borrmann effect diffractometry. The conditions of a test for the structural perfection of as-grown crystals, based on the observation of interference bands on the section topographs, are refined.
- Subjects
SILICON crystals; CRYSTALLOGRAPHY; CRYSTAL optics; CRYSTALS; X-ray crystallography; X-ray diffractometers
- Publication
Technical Physics Letters, 2006, Vol 32, Issue 12, p1079
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/S106378500612025X