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- Title
The Features of Photoluminescence from Nanograins of Gallium-Doped Cubic Silicon Carbide.
- Authors
Kostishko, B. M.; Nagornov, Yu. S.; Atazhanov, Sh. R.; Mikov, S. N.
- Abstract
The photoluminescence (PL) and photoexcitation spectra of carbonized porous silicon (por-Si) doped with gallium in the course of a high-temperature annealing were studied. It is shown that carbonization leads to the formation of a heterojunction between 3C-SiC nanograins and silicon quantum wires. The spectrum of PL from gallium-doped silicon carbide nanograins is shifted by 0.35 eV toward higher energies relative to the spectrum of bulk por-Si and exhibits several features related to the radiative annihilation processes involving phonons and donor-acceptor (N-Ga) pairs. The PL excitation spectra of carbonized por-Si display two resonance bands with the energies E[sub 1] = 2.8-3.1 eV and E[sub 2] = 3.2-3.7 eV.
- Subjects
POROUS silicon; PHOTOLUMINESCENCE; NANOSTRUCTURED materials
- Publication
Technical Physics Letters, 2002, Vol 28, Issue 9, p743
- ISSN
1063-7850
- Publication type
Article
- DOI
10.1134/1.1511771