Back to matchesWe found a matchYour institution may have access to this item. Find your institution then sign in to continue.TitleX-ray Irradiation at Subthreshold Energies Modifies the Surface Micromorphology of Epitaxial Silicon Layers on Sapphire.AuthorsKiselev, A. N.; Perevoshchikov, V. A.; Skupov, V.D.; Filatov, D. O.AbstractAtomic force microscopy investigations revealed a change in the surface microrelief of the heteroepitaxial silicon films on sapphire substrates after pulsed X-ray irradiation at an energy of E ≥ 140 keV.SubjectsSAPPHIRES; EPITAXY; IRRADIATIONPublicationTechnical Physics Letters, 2001, Vol 27, Issue 9, p725ISSN1063-7850Publication typeArticleDOI10.1134/1.1405240