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MoS2 Thin Films Grown by Sulfurization of DC Sputtered Mo Thin Films on Si/SiO2 and C-Plane Sapphire Substrates.
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- Journal of Electronic Materials, 2021, v. 50, n. 3, p. 1452, doi. 10.1007/s11664-020-08687-6
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- Article
Effects of Cooling Process on GaN Crystal Growth by Na Flux Method.
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- Journal of Electronic Materials, 2020, v. 49, n. 9, p. 5260, doi. 10.1007/s11664-020-08230-7
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- Article
Contrasting E−H Bond Activation Pathways of a Phosphanyl‐Phosphagallene.
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- Angewandte Chemie, 2021, v. 133, n. 40, p. 22228, doi. 10.1002/ange.202109334
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- Article
Light‐Induced Nonoxidative Coupling of Methane Using Stable Solid Solutions.
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- Angewandte Chemie, 2021, v. 133, n. 38, p. 20928, doi. 10.1002/ange.202108870
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- Article
Substrates for spintronic structures based on epitaxial gallium nitride films.
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- Theoretical Foundations of Chemical Engineering, 2012, v. 46, n. 4, p. 387, doi. 10.1134/S0040579512040033
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- Article
Effect of distributed Bragg reflectors on photoluminescence properties of CH<sub>3</sub>NH<sub>3</sub>PbI<sub>3</sub> film.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-14991-4
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- Article
Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-07242-z
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- Article
Identification of type of threading dislocation causing reverse leakage in GaN p–n junctions after continuous forward current stress.
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- Scientific Reports, 2022, v. 12, n. 1, p. 1, doi. 10.1038/s41598-022-05416-3
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- Article
Fabrication and characterization of InN-based metal-semiconductor-metal infrared photodetectors prepared using sol–gel spin coated technique.
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- Functional Materials Letters, 2021, v. 14, n. 5, p. 1, doi. 10.1142/S1793604721510243
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- Article
Optimal Growth Conditions for Forming c -Axis (002) Aluminum Nitride Thin Films as a Buffer Layer for Hexagonal Gallium Nitride Thin Films Produced with In Situ Continual Radio Frequency Sputtering.
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- Micromachines, 2022, v. 13, n. 9, p. 1546, doi. 10.3390/mi13091546
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- Article
Effect of the Lapping Platen Groove Density on the Characteristics of Microabrasive-Based Lapping.
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- Micromachines, 2020, v. 11, n. 8, p. 775, doi. 10.3390/mi11080775
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- Article
Cu IONS IRRADIATION IMPACT ON STRUCTURAL AND OPTICAL PROPERTIES OF GaN THIN FILM.
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- International Journal of Modern Physics B: Condensed Matter Physics; Statistical Physics; Applied Physics, 2013, v. 27, n. 8, p. 1, doi. 10.1142/S0217979213500203
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- Article
Blue Light: A Fascinating Journey (Nobel Lecture).
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- Angewandte Chemie International Edition, 2015, v. 54, n. 27, p. 7750, doi. 10.1002/anie.201502664
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- Article
掺杂对 GaN 晶体力学性能影响的研究.
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- Journal of Synthetic Crystals, 2023, v. 52, n. 2, p. 229
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- Article
Effect of Growth Pressure on Properties of β-Ga<sub>2</sub>O<sub>3</sub> Thin Films Grown by Molecular Beam Epitax.
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- Journal of Synthetic Crystals, 2022, v. 51, n. 7, p. 1152
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- Article
p-type doping of ZnO films and growth of tenary ZnMgO and ZnCdO: application to light emitting diodes and laser diodes.
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- International Materials Reviews, 2014, v. 59, n. 2, p. 61, doi. 10.1179/1743280413Y.0000000025
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- Article
Exfoliation of Threading Dislocation-Free, Single-Crystalline, Ultrathin Gallium Nitride Nanomembranes.
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- Advanced Functional Materials, 2014, v. 24, n. 16, p. 2305, doi. 10.1002/adfm.201303001
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- Article
Sub-surface Imaging of Porous GaN Distributed Bragg Reflectors via Backscattered Electrons.
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- Microscopy & Microanalysis, 2024, v. 30, n. 2, p. 208, doi. 10.1093/mam/ozae028
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- Article
The van der Waals Epitaxy of High‐Quality N‐Polar Gallium Nitride for High‐Response Ultraviolet Photodetectors with Polarization Electric Field Modulation.
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- Advanced Electronic Materials, 2022, v. 8, n. 1, p. 1, doi. 10.1002/aelm.202100759
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- Article
Effects of thickness on thermoelectric properties of Bi0.5Sb1.5Te3 thin films.
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- Applied Nanoscience, 2020, v. 10, n. 7, p. 2375, doi. 10.1007/s13204-020-01441-8
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- Article
X-ray diffraction investigation of GaN layers on Si(111) and Al<sub>2</sub>O<sub>3</sub> (0001) substrates.
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- Semiconductor Physics, Quantum Electronics & Optoelectronics, 2013, v. 16, n. 3, p. 265
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Lift-Off Mechanism of GaN Thin Films with Buried Nanocavities Investigated by SEM and TEM.
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- Journal of Electronic Materials, 2019, v. 48, n. 5, p. 3036, doi. 10.1007/s11664-019-07035-7
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- Article
Characterization of Pb-Doped GaN Thin Films Grown by Thermionic Vacuum Arc.
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- Journal of Electronic Materials, 2018, v. 47, n. 7, p. 3727, doi. 10.1007/s11664-018-6232-7
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- Article
Fabrication and Characterization of Reactively Sputtered AlInGaN Films with a Cermet Target Containing 5% Al and 7.5% In.
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- Journal of Electronic Materials, 2017, v. 46, n. 4, p. 1948, doi. 10.1007/s11664-016-5157-2
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- Article
Incorporation of Mg in Free-Standing HVPE GaN Substrates.
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- Journal of Electronic Materials, 2016, v. 45, n. 6, p. 2692, doi. 10.1007/s11664-016-4413-9
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- Article
Strain Distribution Across HVPE GaN Layer Grown on Large Square-Patterned Template Studied by Micro-Raman Scattering.
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- Journal of Electronic Materials, 2014, v. 43, n. 7, p. 2715, doi. 10.1007/s11664-014-3225-z
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- Article
Reduction of Dislocation Density in HVPE-Grown GaN Epilayers by Using In Situ-Etched Porous Templates.
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- Journal of Electronic Materials, 2014, v. 43, n. 3, p. 786, doi. 10.1007/s11664-013-2920-5
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Implantation Studies on Silicon-Doped GaN.
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- Journal of Electronic Materials, 2013, v. 42, n. 1, p. 21, doi. 10.1007/s11664-012-2278-0
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- Article
Growth of Thin Cadmium Arsenide Films by Magnetron Sputtering and Their Structure.
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- Inorganic Materials, 2019, v. 55, n. 9, p. 879, doi. 10.1134/S002016851909005X
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- Article
Morphology of the Surface of Semipolar GaN Layers during Epitaxy on a Nano-Patterned Si Substrate.
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- Technical Physics, 2023, v. 68, n. 11, p. 395, doi. 10.1134/S1063784223900048
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- Article
High Responsivity in GaN Ultraviolet Photodetector Grown on a Periodic Trapezoid-Column Patterned Sapphire Substrate.
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- Sensors & Materials, 2017, v. 29, n. 4, p. 363, doi. 10.18494/SAM.2017.1517
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- Article
GaN Thin Films Deposited on n-Si (111) Substrate with a Metal Organic Chemical Vapor Deposition System for Sensing Ultraviolet Light.
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- Sensors & Materials, 2016, v. 28, n. 6, p. 689, doi. 10.18494/sam.2016.1334
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- Article
BaZrO<sub>3</sub>/MgO-templated epitaxy showing a conductivity increase of three orders of magnitude for the Ba<sub>0.95</sub>La<sub>0.05</sub>SnO<sub>3</sub> films on Al<sub>2</sub>O<sub>3</sub> substrates, with very high transparency and X-band electromagnetic shielding
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- NPG Asia Materials, 2023, v. 15, n. 1, p. 1, doi. 10.1038/s41427-023-00512-w
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- Article
Defects induced by MeV H<sup>+</sup> implantation for exfoliating of free-standing GaN film.
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- Applied Physics A: Materials Science & Processing, 2018, v. 124, n. 2, p. 0, doi. 10.1007/s00339-017-1508-y
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- Article
Evolution of femtosecond laser-induced damage in doped GaN thin films.
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- Applied Physics A: Materials Science & Processing, 2014, v. 114, n. 2, p. 381, doi. 10.1007/s00339-013-8103-7
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- Article
Effect of ZnO sacrificial layer thickness on the structure and optical properties of GaN nanoparticles prepared by RF magnetron sputtering.
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- Applied Physics A: Materials Science & Processing, 2013, v. 113, n. 1, p. 161, doi. 10.1007/s00339-012-7506-1
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- Article
Surface morphology of ZnO buffer layer and its effects on the growth of GaN films on Si substrates by magnetron sputtering.
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- Applied Physics A: Materials Science & Processing, 2009, v. 94, n. 2, p. 287, doi. 10.1007/s00339-008-4777-7
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- Article
A structural analysis of ultrathin barrier (In)AlN/GaN heterostructures for GaN‐based high‐frequency power electronics.
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- Surface & Interface Analysis: SIA, 2022, v. 54, n. 5, p. 576, doi. 10.1002/sia.7067
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- Article
Characterization of nitride-based LED materials and devices using TOF-SIMS.
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- Surface & Interface Analysis: SIA, 2014, v. 46, p. 299, doi. 10.1002/sia.5634
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- Article
Exchange Coupling in Synthetic Anion‐Engineered Chromia Heterostructures.
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- Advanced Functional Materials, 2022, v. 32, n. 10, p. 1, doi. 10.1002/adfm.202109828
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- Article
Polarization Effects on Intersubband Absorption in GaN/ZnGeN2 Quantum Wells.
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- Journal of the Institute of Science & Technology / Iğdır Üniversitesi Fen Bilimleri Enstitüsü Dergisi, 2021, v. 11, n. 4, p. 2772, doi. 10.21597/jist.955530
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- Article
Growth and Properties of Ultra-Thin PTCDI-C8 Films on GaN(0001).
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- Crystals (2073-4352), 2024, v. 14, n. 3, p. 201, doi. 10.3390/cryst14030201
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Study of Nitridation Effect on Structural, Morphological, and Optical Properties of GaAs Film Growth on Silicon Substrates via Close Space Vapor Transport Technique.
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- Crystals (2073-4352), 2023, v. 13, n. 4, p. 613, doi. 10.3390/cryst13040613
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- Article
Effect of the Growth Interruption on the Surface Morphology and Crystalline Quality of MOCVD-Grown h-BN.
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- Crystals (2073-4352), 2023, v. 13, n. 3, p. 486, doi. 10.3390/cryst13030486
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- Article
Light Output Enhancement of GaN-Based Light-Emitting Diodes Based on AlN/GaN Distributed Bragg Reflectors Grown on Si (111) Substrates.
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- Crystals (2073-4352), 2020, v. 10, n. 9, p. 772, doi. 10.3390/cryst10090772
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- Article
Properties of N-Type GaN Thin Film with Si-Ti Codoping on a Glass Substrate.
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- Crystals (2073-4352), 2020, v. 10, n. 7, p. 582, doi. 10.3390/cryst10070582
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- Article
Effects of Thermal Annealing on Optical Properties of Be-Implanted GaN Thin Films by Spectroscopic Ellipsometry.
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- Crystals (2073-4352), 2020, v. 10, n. 6, p. 439, doi. 10.3390/cryst10060439
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- Article
Controlling the Superconducting Critical Temperature and Resistance of NbN Films through Thin Film Deposition and Annealing.
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- Coatings (2079-6412), 2024, v. 14, n. 4, p. 496, doi. 10.3390/coatings14040496
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- Article
Mechanical Properties and Creep Behavior of Undoped and Mg-Doped GaN Thin Films Grown by Metal–Organic Chemical Vapor Deposition.
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- Coatings (2079-6412), 2023, v. 13, n. 6, p. 1111, doi. 10.3390/coatings13061111
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- Article
Downstream Electric Field Effects during Film Deposition with a Radio Frequency Plasma and Observations of Carbon Reduction.
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- Coatings (2079-6412), 2022, v. 12, n. 10, p. 1581, doi. 10.3390/coatings12101581
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- Article