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- Title
A Monolithically Integrated InGaN Nanowire/Si Tandem Photoanode Approaching the Ideal Bandgap Configuration of 1.75/1.13 eV.
- Authors
Fan, Shizhao; Shih, Ishiang; Mi, Zetian
- Abstract
Indium gallium nitride (InGaN) nanowire arrays (Eg ≈1.75 eV) are monolithically integrated on a Si solar cell through a Si tunnel junction. With such a nearly ideal energy bandgap configuration, a saturated photocurrent density of 16.3 mA cm−2 is achieved under AM1.5G one sun illumination. The applied‐bias‐photon‐to‐current efficiency reaches 8.3% at 0.5 V versus normal hydrogen electrode.
- Subjects
OPTICAL properties of indium gallium nitride; SPECTRUM analysis; INDIUM gallium nitride; BAND gaps; PHOTOCONDUCTIVITY; ELECTRONIC band structure; TUNNEL junctions (Materials science)
- Publication
Advanced Energy Materials, 2017, Vol 7, Issue 2, pn/a
- ISSN
1614-6832
- Publication type
Article
- DOI
10.1002/aenm.201600952