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- Title
EXTRACTING A NONLINEAR ELECTRO-THERMAL MODEL FOR A GAN HFET.
- Authors
Edwards, Andrew; Geller, Bernard; Kizilyalli, Isik C.
- Abstract
This article describes the procedure used to extract a nonlinear model for a gallium nitride (GaN) power HFET The source device is a 2 mm gate-width GaN-on-silicon HFET produced by Nitronex Corp., although the procedure can be applied to many other types of transistors. The Angelov2 model was chosen as the vehicle for this work since it is numerically well behaved and is available in both Applied Wave Research's Microwave Office (MWO) and Agilent's Advanced Design System (ADS) EDA tools. The extracted model is scalable and temperature dependent and has been verified under both small- and large-signal conditions for devices up to 36 mm in gate width. Comparisons' of measured and simulated results are presented.
- Subjects
NONLINEAR electric circuits; FIELD-effect transistors; MODULATION-doped field-effect transistors; GALLIUM compounds; GALLIUM nitride; NITRONEX Corp.; TRANSISTORS; AWR Corp.; AGILENT Technologies Inc.
- Publication
Microwave Journal, 2008, Vol 51, Issue 2, p144
- ISSN
0192-6225
- Publication type
Article