We found a match
Your institution may have access to this item. Find your institution then sign in to continue.
- Title
Quantum confinement-induced semimetal-to-semiconductor evolution in large-area ultra-thin PtSe<sub>2</sub> films grown at 400 °C.
- Authors
Ansari, Lida; Monaghan, Scott; McEvoy, Niall; Coileáin, Cormac Ó; Cullen, Conor P.; Lin, Jun; Siris, Rita; Stimpel-Lindner, Tanja; Burke, Kevin F.; Mirabelli, Gioele; Duffy, Ray; Caruso, Enrico; Nagle, Roger E.; Duesberg, Georg S.; Hurley, Paul K.; Gity, Farzan
- Abstract
In this work, we present a comprehensive theoretical and experimental study of quantum confinement in layered platinum diselenide (PtSe2) films as a function of film thickness. Our electrical measurements, in combination with density functional theory calculations, show distinct layer-dependent semimetal-to-semiconductor evolution in PtSe2 films, and highlight the importance of including van der Waals interactions, Green's function calibration, and screened Coulomb interactions in the determination of the thickness-dependent PtSe2 energy gap. Large-area PtSe2 films of varying thickness (2.5–6.5 nm) were formed at 400 °C by thermally assisted conversion of ultra-thin platinum films on Si/SiO2 substrates. The PtSe2 films exhibit p-type semiconducting behavior with hole mobility values up to 13 cm2/V·s. Metal-oxide-semiconductor field-effect transistors have been fabricated using the grown PtSe2 films and a gate field-controlled switching performance with an ION/IOFF ratio of >230 has been measured at room temperature for a 2.5–3 nm PtSe2 film, while the ratio drops to <2 for 5–6.5 nm-thick PtSe2 films, consistent with a semiconducting-to-semimetallic transition with increasing PtSe2 film thickness. These experimental observations indicate that the low-temperature growth of semimetallic or semiconducting PtSe2 could be integrated into the back-end-of-line of a silicon complementary metal-oxide-semiconductor process.
- Subjects
QUANTUM confinement effects; SEMICONDUCTORS; BAND gaps; SUBSTRATES (Materials science); VAN der Waals forces
- Publication
NPJ 2D Materials & Applications, 2019, Vol 3, Issue 1, pN.PAG
- ISSN
2397-7132
- Publication type
Article
- DOI
10.1038/s41699-019-0116-4