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- Title
Low-Temperature Instabilities of the Electrical Properties of Cd<sub>0.96</sub>Zn<sub>0.04</sub>Te:Cl Semi-insulating Crystals.
- Authors
Savitskiĭ, A. V.; Parfenyuk, O. A.; Ilashchuk, M. I.; Ulyanitskiĭ, K. S.; Chupyra, S. N.; Vakhnyak, N. D.
- Abstract
The electrical properties in the temperature range 295–430 K and low-temperature (4.2 K) photoluminescence of Cd1 – xZnxTe:Cl semi-insulating crystals grown from melts with a variable impurity content (C0Cl = 5×1017–1×1019cm–3) are investigated. Nonequilibrium processes leading to a decrease in carrier concentration are observed in all the samples at low temperatures (T = 330–385 K). These changes are reversible. The activation energy of these processes Ea is found to be 0.88 eV. As with semi-insulating CdTe:Cl, the observed phenomena can be explained by a change in the charge state of background copper atoms: CuCd↔Cui. The introduction of Zn changes the ratio of the concentrations of shallow-level donors Cui and ClTe from their levels in the initial material. © 2005 Pleiades Publishing, Inc.
- Subjects
CRYSTALS; CRYSTALLOGRAPHY; LUMINESCENCE; PHOTOLUMINESCENCE; TEMPERATURE; LIGHT sources
- Publication
Semiconductors, 2005, Vol 39, Issue 7, p754
- ISSN
1063-7826
- Publication type
Article
- DOI
10.1134/1.1992628