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- Title
Band gap energy of ZnO<sub>x</sub>Se<sub>1−x</sub> over the entire composition range.
- Authors
Zhao, Chuan-Zhen; Sun, Si-Yu; Sun, Xiao-Dong; Wang, Sha-Sha; Wang, Jun
- Abstract
A model predicting the band gap energy of ZnOxSe1−x over the entire composition range is set up. It is found that the model can provide a good description for the band gap energy of ZnOxSe1−x. It is also found that the physical mechanisms for the band gap evolution in different composition ranges are different. Although the physical mechanism for the band gap evolution in the Se-rich region differs from that in the O-rich region, the difference between the band gap reductions in the Se-rich and O-rich regions is not large. In addition, it is found that the band gap bowing in the middle composition region is smaller than that in the Se-rich and O-rich regions. The reason is that the middle composition region lies in the bandlike region while the Se-rich and the O-rich composition regions lie in the impurity-like region.
- Subjects
BAND gaps; ZINC compounds; MICROELECTRONICS; OPTOELECTRONIC devices; SEMICONDUCTORS
- Publication
Applied Physics A: Materials Science & Processing, 2018, Vol 124, Issue 10, p1
- ISSN
0947-8396
- Publication type
Article
- DOI
10.1007/s00339-018-2124-1