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- Title
Formation of complexes consisting of impurity Mn atoms and group VI elements in the crystal lattice of silicon.
- Authors
Ismailov, K. A.; Iliev, X. M.; Tursunov, M. O.; Ismaylov, B. K.
- Abstract
Formation of complexes of impurity Mn atoms with impurity atoms of group VI elements (S, Se, Te) in the silicon crystal lattice has been studied. It has been experimentally found that formation of electrically neutral molecules with an ionic-covalent bond between Mn atoms and group VI elements takes place, which possibly leads to formation of new Si2BVI ++Mn binary unit cells in the silicon crystal lattice. It has been shown that in the samples Si〈S, Mn〉, Si〈Se, Mn〉 and Si〈Te, Mn〉, an intense complex formation occurs at the temperatures 1100, 820 and 650 °C, respectively.
- Subjects
CRYSTAL lattices; SILICON crystals; UNIT cell; COVALENT bonds
- Publication
Semiconductor Physics, Quantum Electronics & Optoelectronics, 2021, Vol 24, Issue 3, p255
- ISSN
1560-8034
- Publication type
Article
- DOI
10.15407/spqeo24.03.255