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- Title
Comparison of electrical properties of x-ray detector based on PbI crystal with different bias electric field configuration.
- Authors
Zhu, Xinghua; Sun, Hui; Yang, Dingyu; Wangyang, Peihua; Gao, Xiuying
- Abstract
In this work we report the dark current, photocurrent and carrier transport properties of the x-ray detector based on lead iodide (PbI) crystal. The detectors were built with two orthogonal directions configuration as the bias electric field parallel to the crystallographic c-axis E// c and perpendicular to the c-axis E⊥ c. It presents the electrical anisotropy including resistivity, dark current, carrier transport and x-ray induced photoelectricity properties with considering the configuration of bias field and c-axis. A mechanism of carrier scattering effect from anisotropic lattice structure, dislocation and stacking fault could be mainly responsible for this anisotropy property in PbI crystal. All the results indicate that the crystal orientation will be taken into account when we design and fabricate the x-ray detectors based on PbI crystals or films.
- Subjects
X-ray crystallography; IODIDES; ELECTRIC fields; ANISOTROPY; CRYSTALLOGRAPHY
- Publication
Journal of Materials Science: Materials in Electronics, 2016, Vol 27, Issue 11, p11798
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-016-5320-9