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- Title
Spatial variations of carrier and defect concentration in VGF GaAs:Si.
- Authors
Baeumler, Martina; Börner, Frank; Kretzer, Ulrich; Scheffer-Czygan, Max; Bünger, Thomas; Wagner, Joachim
- Abstract
Wafers cut from Si-doped vertical gradient freeze (VGF) GaAs crystals with silicon concentration varying from 1.5 to 3.4 × 1018 cm−3 have been investigated by low temperature photoluminescence topography. Carrier concentration maps were calculated from intensity topograms recorded on the high-energy slope of the band-to-band recombination, which depends on the carrier concentration predominantly due to band renormalization and band filling. Comparison to maps recorded on the BAs-related PL band reveal a clear anti-correlation consistent with the view of BAs complex formation.
- Subjects
SPATIAL variation; FREEZE fracturing; CRYSTALS; SILICON; LOW temperatures; PHOTOLUMINESCENCE; LUMINESCENCE; ENERGY bands; RENORMALIZATION (Physics)
- Publication
Journal of Materials Science: Materials in Electronics, 2008, Vol 19, p165
- ISSN
0957-4522
- Publication type
Article
- DOI
10.1007/s10854-007-9532-x