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- Title
Near-IR laser inelastic electronic light scattering spectroscopy on transitions between ground and excited states of acceptor centers in GaAs and InP crystals.
- Authors
Baıramov, B. Kh.; Zakharchenya, B. P.; Toporov, V. V.
- Abstract
We report the development of a method for recording the low-temperature (T=6 K) near-IR inelastic light scattering spectra and the observation of electronic scattering on the transitions 1s[sub 3/2](Γ[sub 8])→2s[sub 3/2](Γ[sub 8]) between the ground and excited states of different shallow acceptor centers in a n-type semi-insulating crystal si-GaAs (n=1.0×10[sup 8] cm[sup -3]) and in a doped p-InP crystal (p=3.6×10[sup 17] cm[sup -3]). Moreover, a new line, associated with the transition 1s[sub 3/2](Γ[sub 8])→2p[sub 3/2](Γ[sub 8]) and due to a dielectric local mode, recorded for the first time in the spectra of narrow-gap semiconductors, was found in the residual-frequency band in the p-InP spectrum between TO(Γ) and LO(Γ) phonons. © 1998 American Institute of Physics.
- Subjects
LIGHT scattering; NEAR infrared spectroscopy; GALLIUM arsenide; INDIUM phosphide
- Publication
JETP Letters, 1998, Vol 67, Issue 5, p352
- ISSN
0021-3640
- Publication type
Article
- DOI
10.1134/1.567673