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- Title
Spin-based magnetic random-access memory for high-performance computing.
- Authors
Cai, Kaiming; Jin, Tianli; Lew, Wen Siang
- Abstract
The article discusses the potential of spin-based magnetic random-access memory (MRAM) for high-performance computing. MRAMs, such as spin-transfer torque (STT) and spin-orbit torque (SOT) MRAMs, offer advantages such as fast speed, non-volatility, and compatibility with CMOS technology. They could potentially replace current memories in computer architectures and enable new types of computing, including in-memory computing, neuromorphic computing, and probabilistic computing. However, there are challenges to overcome, such as improving the read margin and addressing issues related to down-scaling. The research was supported by various organizations and funding sources.
- Subjects
RANDOM access memory; QUANTUM annealing; MAGNETIC domain walls; MAGNETIC tunnelling
- Publication
National Science Review, 2024, Vol 11, Issue 3, p1
- ISSN
2095-5138
- Publication type
Article
- DOI
10.1093/nsr/nwad272