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- Title
Three-dimensional studies of siC polytype transformations.
- Authors
Saparin, G. V.; Obyden, S. K.; Ivannikov, P. V.; Shishkin, E. B.; Mokhov, E. N.; Roenkov, A. D.; Hofmann, D. H.
- Abstract
Scanning electron microscopy technique in colour cathodoluminescence mode is proposed for two-dimensional (2-D) and three-dimensional (3-D) studies of polytype structures of SiC epitaxial layers grown by the sublimation sandwich method. It allows us to perform layer-by-layer structure analysis of a polytype on depths up to 2.5 μm with high resolution. An effect of polytype instability under growth on singular substrate (0001) is revealed. It leads to the fact that the grown SiC layer represents the set of alternating sublayers of different polytypes such as 4H, 6H, and 3C. Some mechanisms of polytype syntaxy in SiC are discussed.
- Publication
Scanning, 1997, Vol 19, Issue 4, p269
- ISSN
0161-0457
- Publication type
Article
- DOI
10.1002/sca.4950190404